DF3A3.6FV(TPL3,Z) Toshiba

DF3A3.6FV TOSHIBA Diodes for Protecting against ESD DF3A3.6FV Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) 1.20.05 0.80.05 * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without 1 limitation, the constant voltage diode application. 2 3 The mounting of two devices on an ultra-compact package reduces the number of parts and lowers assembly cost. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Power dissipation P* 150 mW Junction temperature T 150 C j 1.CATHODE1 2.CATHODE2 Storage temperature range T 55 to 150 C stg VESM 3.ANODE Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA reliability significantly even if the operating conditions (i.e. TOSHIBA 1-1Q1B operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.0015 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on FR4 board (25.4 mm 25.4 mm 1.6 mmt) 0.5mm 0.45mm 0.45mm 0.4mm Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Zener voltage V I = 5 mA 3.4 3.6 3.8 V Z Z Dynamic impedance Z I = 5 mA 130 Z Z Reverse current I V = 1.8 V 100 A R R Terminal capacitance C V = 0, f = 1MHz 110 pF T R (between Cathode and Anode) Start of commercial production 2003-06 1 2014-03-01 1.20.05 0.80.05 0.50.05 0.4 0.4 0.220.05 0.130.05 0.320.05 DF3A3.6FV Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30 kV (Contact discharge) Criterion: No damage to device elements Marking Equivalent Circuit (top view) 3.6 IZ - VZ CT - VR 100 1000 Ta=25C Ta=25C f=1MHz 10 1 100 0 0.1 0 0.01 0 10 0.001 012 34 567 89 10 012 345 REVERSE VOLTAGE VR (V) ZENER VOLTAGE VZ (V) 2 2014-03-01 ZENER CURRENT IZ (mA) TOTAL CAPACITANCE CT (pF)