DF3A5.6FV(TPL3,Z) Toshiba

DF3A5.6FV TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF3A5.6FV Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD). 1.20.05 0.80.05 * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. 1 2 3 Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Power dissipation P* 150 mW 1.CATHODE1 Junction temperature T 150 C j 2.CATHODE2 VESM Storage temperature range T 55~150 C stg 3.ANODE JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 1-1Q1B reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 0.0015 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on FR4 board (25.4 mm 25.4 mm 1.6 mmt) 0.5mm 0.45mm 0.45mm 0.4mm Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Zener voltage V I = 5 mA 5.3 5.6 6.0 V Z Z Dynamic impedance Z I = 5 mA 40 Z Z Reverse current I V = 2.5 V 1.0 A R R Terminal capacitance C V = 0, f = 1MHz 65 pF T R (between Cathode and Anode) 1 2007-11-01 1.20.05 0.80.05 0.50.05 0.4 0.4 0.220.05 0.130.05 0.320.05 DF3A5.6FV Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30kV (Contact discharge) Judgment contents : No element destruction Marking Equivalent Circuit (top view) 5.6 IZ - VZ CT - VR 100 100 Ta=25C Ta=25C f=1MHz 10 1 0 0.1 0.010 10 0.0001 01 23 4 5 6 0 12 3 45 67 8 9 10 ZENER VOLTAGE VZ (V) REVERSE VOLTAGE VR (V) 2 2007-11-01 ZENER CURRENT IZ (mA) TOTAL CAPACITANCE CT (pF)