USBULC6-2F3 STMicroelectronics

USBULC6-2F3 2-line Transil, transient surge voltage suppressor (TVS) ultralow capacitance protection for high speed USB Datasheet - production data Breakdown voltage V = 6.0 V min. BR Flip Chip, 400 m pitch, lead-free Very low leakage current Very small PCB area RoHS compliant Flip Chip Benefits USBULC6-2F3 (4 bumps) Minimized impact on rise and fall times for maximum data integrity Low PCB space occupation Higher reliability offered by monolithic Figure 1. Pin layout (bump side) and Device integration configuration A B Complies with the following standards IEC 61000-4-2 level 4 on external pins: 1 8 kV (contact discharge) MIL STD 883G - Method 3015.7 2 25 kV (Human body model) Application A1 B1 This device is designed to protect a high speed USB port in wireless handsets (up to 480 Mb/s according to USB 2.0 high speed specification). Description The USBULC6-2F3 is a monolithic, application specific discrete device dedicated to ESD B2 A2 protection of high speed interfaces. Its ultralow line capacitance secures a high level Note: B1 and B2 bumps must be grounded on the PCB together of signal integrity without compromising the protection of downstream sensitive chips against the most stringently characterized ESD strikes. Features Ultralow diode capacitance (1.5 pF max) Two data lines (D+ and D-) protected against ESD TM: Transil is a trademark of STMicroelectronics. April 2014 DocID12970 Rev 4 1/9 This is information on a product in full production. www.st.com Obsolete Product(s) - Obsolete Product(s)Characteristics USBULC6-2F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ESD discharge IEC 61000-4-2: V kV PP Contact discharge 10 P Peak pulse power dissipation (8/20 s) 90 W PP T Maximum junction temperature 125 C j T Operating temperature range -30 to + 85 C op T Storage temperature range -55 to +150 C stg Figure 2. Electrical characteristics - definitions I Symbol Parameter V Breakdown voltage BR I Leakage current V RM RM V Stand-off voltage RM V Clamping voltage CL R Dynamic impedance d I Peak pulse current PP V V V T Voltage temperature coefficient CL BR RM V IRM Slope = 1/Rd I PP Table 2. Electrical characteristics - values (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 - 9 V BR R I V = 3 V - - 70 nA RM RM R Exponential wave form 8/20 s, I = 1 to 5 A - 1.2 - d pp -4 TI = 1 mA - - 5 10 / C R C V = 0 V, V = 30 mV, F = 1 MHz - - 1.5 pF line LINE OSC 2/9 DocID12970 Rev 4 Obsolete Product(s) - Obsolete Product(s)