X-On Electronics has gained recognition as a prominent supplier of DF3A6.2LFU,LF(B ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. DF3A6.2LFU,LF(B ESD Suppressors / TVS Diodes are a product manufactured by Toshiba. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

DF3A6.2LFU,LF(B Toshiba

DF3A6.2LFU,LF(B electronic component of Toshiba
DF3A6.2LFU,LF(B Toshiba
DF3A6.2LFU,LF(B ESD Suppressors / TVS Diodes
DF3A6.2LFU,LF(B  Circuit Protection

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See Product Specifications
Part No. DF3A6.2LFU,LF(B
Manufacturer: Toshiba
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressor Diode Zener Uni-Dir 5V 6.2Vbr 3-Pin USM T/R
Datasheet: DF3A6.2LFU,LF(B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
667: USD 0.1426 ea
Line Total: USD 95.11 
Availability - 0
MOQ: 667  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 625
Multiples : 1
625 : USD 0.1572
1000 : USD 0.152
2500 : USD 0.1476
5000 : USD 0.138
10000 : USD 0.1346

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 358
Multiples : 1
358 : USD 0.2483
500 : USD 0.2415
1000 : USD 0.2356
2500 : USD 0.2309

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 667
Multiples : 1
667 : USD 0.1426
1000 : USD 0.138
2500 : USD 0.134
5000 : USD 0.1303
10000 : USD 0.1271

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 667
Multiples : 667
667 : USD 0.1426
1000 : USD 0.138
2500 : USD 0.134
5000 : USD 0.1303
10000 : USD 0.1271

   
Manufacturer
Product Category
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We are delighted to provide the DF3A6.2LFU,LF(B from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DF3A6.2LFU,LF(B and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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DF3A6.2LFU TOSHIBA Diodes for Protecting against ESD DF3A6.2LFU Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of two devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Low Terminal capacitance: C = 6.5 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Power dissipation P 100 mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 1-2P1A operating temperature/current/voltage, etc.) are within the Weight: 0.006 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Zener voltage V I = 5 mA 5.9 6.2 6.5 V Z Z Dynamic impedance Z I = 5 mA 50 Z Z Reverse current I V = 5 V 2.5 A R R Terminal capacitance C V = 0 V, f = 1 MHz 6.5 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2003-02 1 2014-03-01 DF3A6.2LFU Marking Equivalent Circuit (top view) BU C V T R IZ - VZ 10 100 Ta = 25C Ta=25C f = 1 MHz 10 1 0.01 0 0.01 0.001 0 1 012 34 567 89 10 0 1 2 4 3 5 6 7 ZENER VOLTAGE VZ (V) REVERSE VOLTAGE VR (V) 2 2014-03-01 ZENER CURRENT IZ (mA) TOTAL CAPACITANCE CT (pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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