Doc No. TT4-EA-15066 Revision. 1 Product Standards TVS Diode DY2L3A0C0L1 DY2L3A0C0L1 Silicon epitaxial planar type Unit: mm 0.3 For bidirectional ESD protection and transient voltage suppressor 2 Features IEC 61000-4-2 (ESD) 15kV (air and contact) Low clamping voltage Low capacitance 1 Low leak current 0.215 0.115 Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 2 0.115 1 Marking Symbol: F1 Packaging 0.1 0.215 Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard) 1. Anode 2. Anode Absolute Maximum Ratings Ta = 25 C Panasonic DCSP0603010-N2 Parameter Symbol Rating Unit JEITA *1 PT 100 mW Code Total power dissipation *2 ESD 15 kV Electrostatic discharge *3 Ppp 23 W Peak pulse power *3 Ipp 2.6 A Internal Connection Peak pulse current Junction temperature Tj 150 C 2 Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C Note: *1 Mounted on FR4 board. (25.4 mm x 25.4 mm x 1.0 mm) *2 Test method:IEC61000-4-2 (C = 150 pF, R = 330 W, Contact and Air discharge:10 times) *3 Test method:IEC61000-4-5 (tp = 8/20 ms, Unrepeated) 1 Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Reverse stand-off voltage VRWM 3.0 V *1, *2 VBR IR = 5 mA 5.39 5.80 6.21 V Reverse breakdown voltage Reverse current IR mA VR = 3 V 10 *3 Vc Ipp = 2.6 A, tp = 8/20 ms 10 V Clamping voltage Terminal capacitance Ct VR = 0 V, f = 1 MHz 8.5 pF Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 8 ms/20 ms Pulse Waveform measuring methods for diodes. Front time: 2. Absolute frequency of input and output is 5 MHz. 100 T1 = 1.25 T = 8ms20% 90 Time to half value: 3. *1 The temperature must be controlled 25C for VBR mesurement. T2 = 20ms20% T2 VBR value measured at other temperature must be adjusted to VBR (25C). 50 *2 VBR guaranted 20 ms after current flow. *3 8ms/20ms Pulse Waveform 10 T t T1 1 of 3 Page Established : 2015-10-13 Revised : - - Percent of Ipp 0.6 0.0425 0.4Doc No. TT4-EA-15066 Revision. 1 Product Standards TVS Diode DY2L3A0C0L1 DY2L3A0C0L1 Technical Data (Reference) IR - VBR PT - Ta 150 1.0E-01 Ta = 25 Mounted on FR4 board. Board size : 25.4 mm x 25.4 mm x 1.0 mm 100 1.0E-02 50 1.0E-03 0 1.0E-04 0 20 40 60 80 100 120 140 160 180 200 2 3 4 5 6 7 8 9 10 Ambient temperature Ta ( ) Reverse breakdown voltage VBR (V) IR - VR Ct - VR 14 1.0E-06 Ta = 25 12 Ta = 25 1.0E-07 f = 1 MHz 10 1.0E-08 8 1.0E-09 6 1.0E-10 4 1.0E-11 2 1.0E-12 0 0 1 2 3 0 1 2 3 Reverse voltage VR (V) Reverse voltage VR (V) Page 2 of 3 Established : 2015-10-13 Revised : - - Reverse current IR (A) Total power dissipation PT (mW) Reverse current IR (A) Terminal capacitance Ct (pF)