DF3A6.8F,LF Toshiba

DF3A6.8F TOSHIBA Diodes For Protecting Against ESD DF3A6.8F Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of two devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Power dissipation P 150 mW Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 2-3F1S temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 12 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 6.4 6.8 7.2 V Z Z Dynamic impedance Z I = 5 mA 3 25 Z Z Reverse current I V = 5 V 0.5 A R R Terminal capacitance C V = 0 V, f = 1 MHz 45 pF T R (between Cathode and Anode) Start of commercial production 2005-12 1 2017-12-12 DF3A6.8F Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30 kV (Contact discharge) Criterion: No damage to device elements Marking Equivalent Circuit (Top View) 6.8 2 2017-12-12