DF3A5.6FU(TE85L,F) Toshiba

DF3A5.6FU TOSHIBA Diodes for Protecting against ESD DF3A5.6FU Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of two devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Power dissipation P 100 mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA operating temperature/current/voltage, etc.) are within the TOSHIBA 1-2P1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.006 g (typ.) Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Zener voltage V I = 5 mA 5.3 5.6 6.0 V Z Z Dynamic impedance Z I = 5 mA 40 Z Z Reverse current I V = 2.5 V 1.0 A R R Terminal capacitance C V = 0, f = 1 MHz 65 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2002-06 2014-03-01 1DF3A5.6FU Marking Equivalent Circuit (top view) 5.6 IZ - VZ CT - VR 100 100 Ta=25C Ta=25C f=1MHz 10 1 0 0.1 0.010 10 0.0001 01 23 4 5 6 0 12 3 45 67 8 9 10 ZENER VOLTAGE VZ (V) REVERSE VOLTAGE VR (V) 2014-03-01 2 ZENER CURRENT IZ (mA) TOTAL CAPACITANCE CT (pF)