Product Information

DF2B6.8E,L3F

DF2B6.8E,L3F electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Bi-Directional Protection Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

8000: USD 0.0231 ea
Line Total: USD 184.8

23280 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 8000  Multiples: 8000
Pack Size: 8000

 More Buying Options & Price Grid(s)

Availability Price Quantity
5233 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

DF2B6.8E,L3F
Toshiba

1 : USD 0.0651
10 : USD 0.0643
25 : USD 0.0612
100 : USD 0.0348
250 : USD 0.0251
500 : USD 0.0246
1000 : USD 0.0246
3000 : USD 0.0246

23280 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 8000
Multiples : 8000

Stock Image

DF2B6.8E,L3F
Toshiba

8000 : USD 0.0231
16000 : USD 0.0227
32000 : USD 0.0224
48000 : USD 0.0219
64000 : USD 0.0215

5233 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 305
Multiples : 1

Stock Image

DF2B6.8E,L3F
Toshiba

305 : USD 0.0251
500 : USD 0.0246

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

DF2B6.8E TOSHIBA Diodes for Protecting against ESD DF2B6.8E Unit : mm Product for Use Only as Protection against Electrostatic Discharge (ESD) *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. Abusolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg *: Mounted on a glass epoxy circuit board of 20 mm 20 mm, pad dimension of 4 mm 4 mm. Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the 1-1G1A TOSHIBA reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum Weight: 1.4 mg (typ.) ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/ Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition MinTyp. Max Unit Reverse stand-off voltage V 5.0 V RWM Reverse breakdown voltage V I = 1 mA 5.8 6.8 7.8 V R R Reverse current I V = 5 V 0.5 A R RWM Total capacitance C V = 0 V, f = 1 MHz 15 pF T R Marking Equivalent Circuit (Top View) K1 Start of commercial production 2010-02 1 2014-03-01 DF2B6.8E Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8 kV (Contact discharge) Criterion: No damage to device elements 2 2014-03-01

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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