Product Information

DF2B6M4SL,L3F

DF2B6M4SL,L3F electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Protection Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3105 ea
Line Total: USD 0.31

19303 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
8 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.0628
10 : USD 0.059
100 : USD 0.0499
1000 : USD 0.049
2500 : USD 0.0459
10000 : USD 0.045
20000 : USD 0.045
50000 : USD 0.045

8694 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.3745
10 : USD 0.372
25 : USD 0.3692
100 : USD 0.3666
250 : USD 0.364
500 : USD 0.3614
1000 : USD 0.3541
3000 : USD 0.3541
6000 : USD 0.3541

19 - WHS 3


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 5
Multiples : 5
5 : USD 0.1434
50 : USD 0.1152
150 : USD 0.1011
500 : USD 0.0906

19303 - WHS 4


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.3105
10 : USD 0.215
100 : USD 0.0886
1000 : USD 0.0587
2500 : USD 0.0563
10000 : USD 0.0495
20000 : USD 0.0495
50000 : USD 0.0437
100000 : USD 0.0425

8694 - WHS 5


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 153
Multiples : 1
153 : USD 0.3666
250 : USD 0.364
500 : USD 0.3614
1000 : USD 0.3541

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Clamping Voltage
Cd - Diode Capacitance
Package / Case
Packaging
Current Rating
Brand
Operating Supply Voltage
Pd - Power Dissipation
Factory Pack Quantity :
Vf - Forward Voltage
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

DF2B6M4SL ESD Protection Diodes Silicon Epitaxial Planar DF2B6M4SLDF2B6M4SLDF2B6M4SLDF2B6M4SL 1. 1. GeneralGeneral 1. 1. GeneralGeneral The DF2B6M4SL is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2B6M4SL provides low dynamic resistance and superior protective performance. Furthermore, it is optimum the high speed signal application for the low capacitance performance. The DF2B6M4SL is housed in an ultra-compact package (0.32 0.62 mm) to meet applications that require a small footprint. 2. 2. 2. 2. ApplicationsApplicationsApplicationsApplications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Suitable for use with a 5.0 V signal line. (V 5.5 V) RWM (2) Protects devices with its high ESD performance. (V = 20 kV (Contact / Air) IEC61000-4-2) ESD (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (R = 0.5 (typ.)) DYN (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (V = 10 V I = 2 A (typ.)) C PP (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.32 0.62 mm size (Toshiba package name: SL2)) 4. 4. 4. 4. PackagingPackagingPackagingPackaging SL2 Start of commercial production 2015-10 2015-2017 2017-12-21 1 Toshiba Electronic Devices & Storage Corporation Rev.4.0DF2B6M4SL 5. 5. 5. 5. Example of Circuit DiagramExample of Circuit DiagramExample of Circuit DiagramExample of Circuit Diagram 6. 6. 6. 6. Quick Reference DataQuick Reference DataQuick Reference DataQuick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (Note 1) 5.5 V RWM Total capacitance C V = 0 V, f = 1 MHz 0.2 0.3 pF t R Dynamic resistance R (Note 2) 0.5 DYN Electrostatic discharge voltage V (Note 3) 20 kV ESD (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 8 A and I = 16 A. PP1 PP2 Note 3: Criterion: No damage to devices. 2015-2017 2017-12-21 2 Toshiba Electronic Devices & Storage Corporation Rev.4.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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