X-On Electronics has gained recognition as a prominent supplier of DF5A5.6JE,LM ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. DF5A5.6JE,LM ESD Suppressors / TVS Diodes are a product manufactured by Toshiba. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

DF5A5.6JE,LM Toshiba

DF5A5.6JE,LM electronic component of Toshiba
DF5A5.6JE,LM Toshiba
DF5A5.6JE,LM ESD Suppressors / TVS Diodes
DF5A5.6JE,LM  Circuit Protection

Images are for reference only
See Product Specifications
Part No. DF5A5.6JE,LM
Manufacturer: Toshiba
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes ESD Protection Diode Standard Type
Datasheet: DF5A5.6JE,LM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1587 ea
Line Total: USD 0.16 
Availability - 546
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
546
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.1587
10 : USD 0.105
100 : USD 0.05
500 : USD 0.046
1000 : USD 0.0429
4000 : USD 0.0363
8000 : USD 0.0319
24000 : USD 0.0308

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Number of Channels
Termination Style
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DF5A5.6JE,LM from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DF5A5.6JE,LM and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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DF5A5.6JE TOSHIBA Diodes for Protecting against ESD DF5A5.6JE Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 1.CATHODE1 Power dissipation P 100 mW 2.ANODE 3.CATHODE2 Junction temperature T 150 C j 4.CATHODE3 5.CATHODE4 Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA reliability significantly even if the operating conditions (i.e. TOSHIBA 1-2W1A operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.003 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 5.3 5.6 6.0 V Z Z Dynamic impedance Z I = 5 mA 40 Z Z Reverse current I V =2. 5 V 1.0 A R R Terminal capacitance C V = 0, f = 1 MHz 65 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2002-03 2014-03-01 1DF5A5.6JE Marking Equivalent Circuit (Top View) 5.6 IZ - VZ CT - VR 100 100 Ta=25C Ta=25C f=1MHz 10 1 0 0.1 0.010 10 0.0001 01 23 4 5 6 0 12 3 45 67 8 9 10 ZENER VOLTAGE VZ (V) REVERSE VOLTAGE VR (V) 2014-03-01 2 ZENER CURRENT IZ (mA) TOTAL CAPACITANCE CT (pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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