DF5A6.8F,LF Toshiba

DF5A6.8F TOSHIBA Diodes for Protecting against ESD DF5A6.8F Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Power dissipation P 200 MW 1.CATHODE 1 Junction temperature T 125 C j 2. ANODE Storage temperature range T 55 to 125 C stg 3.CATHODE2 4.CATHODE3 5.CATHODE4 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA operating temperature/current/voltage, etc.) are within the absolute TOSHIBA 1-3H1A maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.014 g (typ.) Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 6.4 6.8 7.2 V Z Z Dynamic impedance Z I = 5 mA 10 25 Z Z Knee dynamic impedance Z I = 0.5 mA 30 ZK Z Reverse current I V = 5 V 0.5 A R R Terminal capacitance C V = 0, f = 1 MHz 45 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 1998-03 1 2014-03-01 0.16DF5A6.8F Marking Equivalent Circuit (Top View) CT - VR 100 Ta=25C f=1MHz 10 02 468 REVERSE VOLTAGE VR (V) 2 2014-03-01 TOTAL CAPACITANCE CT (pF)