DF5A6.8FUTE85LF Toshiba

DF5A6.8FU TOSHIBA Diodes for Protecting against ESD DF5A6.8FU Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Power dissipation P 200 mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA operating temperature/current/voltage, etc.) are within the absolute TOSHIBA 1-2V1B maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.0062 g (typ.) Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 6.4 6.8 7.2 V Z Z Dynamic impedance Z I = 5 mA 10 25 Z Z Knee dynamic impedance Z I = 0.5 mA 30 ZK Z Reverse current I V = 5 V 0.5 A R R Terminal capacitance C V = 0, f = 1 MHz 45 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 1998-05 1 2014-03-01 DF5A6.8FU Marking Equivalent Circuit (Top View) CT - VR 100 Ta=25C f=1MHz 10 02 468 REVERSE VOLTAGE VR (V) 2 2014-03-01 TOTAL CAPACITANCE CT (pF)