DF5A6.8LJE,LM Toshiba

DF5A6.8LJE TOSHIBA Diodes for Protecting against ESD DF5A6.8LJE Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Low Terminal capacitance (between Cathode and Anode) : C = 6.0 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) 1.CATHODE1 2.ANODE Characteristics Symbol Rating Unit 3.CATHODE2 4.CATHODE3 Power dissipation P 100 mW 5.CATHODE4 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 12W1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.003 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Zener voltage V I = 5 mA 6.5 6.8 7.1 V Z Z Dynamic impedance Z I = 5 mA 50 Z Z Reverse current I V = 5 V 0.5 A R R Terminal capacitance C V = 0 V, f = 1 MHz 6.0 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2003-02 1 2014-03-01 DF5A6.8LJE Marking Equivalent Circuit (Top View) CU I V Z Z C V T R 100 m 10 Ta = 25C f = 1 MHz 10 m 1 m 100 10 1 1 0 1 2 3 4 5 6 7 8 9 10 0 5 1 2 3 4 6 7 8 Zener voltage V (V) Z Reverse voltage V (V) R 2 2014-03-01 Zener current I (A) Z Total capacitance C (pF) T