Product Information

DF5A6.8LJE,LM

DF5A6.8LJE,LM electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Low Cap Diode 4 Circuit 6pF 6.8V
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.0537 ea
Line Total: USD 214.8

0 - Global Stock
MOQ: 4000  Multiples: 4000
Pack Size: 4000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 4000
Multiples : 4000
4000 : USD 0.2665
8000 : USD 0.2649
12000 : USD 0.2632
20000 : USD 0.2617
24000 : USD 0.2601
28000 : USD 0.2584
40000 : USD 0.2567
60000 : USD 0.2552
100000 : USD 0.2535

0 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 4000
Multiples : 4000
4000 : USD 0.0434

0 - WHS 3


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.015
10 : USD 0.6518
100 : USD 0.1325
1000 : USD 0.0737
4000 : USD 0.0662

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Termination Style
Package / Case
Packaging
Capacitance
Current Rating
Operating Temperature Range
Power Dissipation Pd
Brand
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Additional Infomation About Product

DF5A6.8LJE TOSHIBA Diodes for Protecting against ESD DF5A6.8LJE Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Low Terminal capacitance (between Cathode and Anode) : C = 6.0 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) 1.CATHODE1 2.ANODE Characteristics Symbol Rating Unit 3.CATHODE2 4.CATHODE3 Power dissipation P 100 mW 5.CATHODE4 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 12W1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.003 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Zener voltage V I = 5 mA 6.5 6.8 7.1 V Z Z Dynamic impedance Z I = 5 mA 50 Z Z Reverse current I V = 5 V 0.5 A R R Terminal capacitance C V = 0 V, f = 1 MHz 6.0 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2003-02 1 2014-03-01 DF5A6.8LJE Marking Equivalent Circuit (Top View) CU I V Z Z C V T R 100 m 10 Ta = 25C f = 1 MHz 10 m 1 m 100 10 1 1 0 1 2 3 4 5 6 7 8 9 10 0 5 1 2 3 4 6 7 8 Zener voltage V (V) Z Reverse voltage V (V) R 2 2014-03-01 Zener current I (A) Z Total capacitance C (pF) T

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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