DSR01S30SL,L3F Toshiba

DSR01S30SL Schottky Barrier Diode Silicon Epitaxial DSR01S30SLDSR01S30SLDSR01S30SLDSR01S30SL 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Switching 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Low reverse current: I = 0.7 A (max) V = 30 V R R 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode SL2 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Reverse voltage V 30 V R Peak forward current I 200 mA FM Average rectified current I (Note 1) 100 mA O Non-repetitive peak forward surge current I (Note 2) 2 A FSM Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy circuit board of 25.4 mm 25.4 mm 1.6 mm, Pad dimension of 645 mm2. Note 2: Measured with a 10 ms pulse. Start of commercial production 2015-06 2015-06-11 1 Rev.1.0DSR01S30SL 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Test Condition Min Typ. Max Unit Forward voltage V I = 10 mA 0.37 0.50 V F F I = 100 mA 0.51 0.62 F Reverse current I V = 10 V 0.35 A R R V = 30 V 0.7 R Total capacitance C V = 0 V, f = 1 MHz 8.2 pF t R 6. 6. MarkingMarking 6. 6. MarkingMarking 7. 7. Usage ConsiderationsUsage Considerations 7. 7. Usage ConsiderationsUsage Considerations Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 8. 8. 8. 8. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) (Unit: mm)(Unit: mm)(Unit: mm)(Unit: mm) 2015-06-11 2 Rev.1.0