DSR01S30SC(TPL3) Toshiba

DSR01S30SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR01S30SC High-Speed Switching Application Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Reverse voltage V 30 V R Average forward current I 100 * mA O 0.270.02 0.320.03 Surge current (10ms) I 2 A FSM 0.0250.015 Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg 1:CATHODE 2:ANODE *: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) SC2 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating JEITA temperature/current/voltage, etc.) are within the absolute maximum TOSHIBA 1-1R1A ratings. Weight: 0.17 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 10 mA 0.37 0.5 F (1) F V Forward voltage V I = 100 mA 0.51 0.62 F (2) F V Reverse current I V = 10 V 0.35 R (1) R A Reverse current I V = 30 V 0.7 R (2) R A Total capacitance C V = 0, f = 1 MHz 8.2 pF T R Marking Equivalent Circuit (Top View) Start of commercial production 2009-05 2014-07-02 1 0.30.03 0.620.03 0.38 0.190.02 0.190.02 0.0250.015DSR01S30SC Handling Precaution Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2014-07-02 2