DSF01S30SC(TPL3) Toshiba

DSF01S30SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF01S30SC High-Speed Switching Application Unit: mm Abusolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Reverse voltage V 30 V R Average forward current I 100* mA O 0.270.02 Surge current (10ms) I 2 A 0.320.03 FSM Junction temperature T 125 C j 0.0250.015 Storage temperature range T 55 to 125 C stg CATHODE *: Mounted on a FR4 board. ANODE 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in SC2 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating JEDEC temperature/current/voltage, etc.) are within the absolute maximum JEITA ratings. Please design the appropriate reliability upon reviewing the Toshiba TOSHIBA 1-1R1A Semiconductor Reliability Handbook (Handling Weight: 0.17 mg (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition MinTyp. Max Unit Forward voltage V I = 10 mA 0.27 0.3 F(1) F V Forward voltage V I = 100 mA 0.41 0.5 F(2) F V Reverse current I V = 10 V 7 R(1) R A Reverse current I V = 30 V 50 R(2) R A Total capacitance C V = 0, f = 1 MHz 9.3 pF T R Marking Equivalent Circuit (Top View) Start of commercial production 2009-05 2014-03-01 1 0.30.03 0.620.03 0.38 0.190.02 0.190.02 0.0250.015DSF01S30SC Handling Precaution Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2014-03-01 2