DF5A6.8LF,LF Toshiba

DF5A6.8LF TOSHIBA Diodes for Protecting against ESD DF5A6.8LF Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Low Terminal capacitance (between Cathode and Anode) : C = 6.0 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit 1.CATHODE 1 Power dissipation P 200 mW 2. ANODE 3.CATHODE2 Junction temperature T 125 C j 4.CATHODE3 5.CATHODE4 Storage temperature range T 55 to 125 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 1-3H1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute Weight: 0.014 g (typ.) maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Zener voltage V I = 5 mA 6.5 6.8 7.1 V Z Z Dynamic impedance Z I = 5 mA 50 Z Z Knee dynamic impedance Z I = 0.5 mA 100 ZK Z Reverse current I V = 5 V 0.5 A R R Terminal capacitance C V = 0 V, f = 1 MHz 6.0 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 1999-04 1 2014-03-01 0.16DF5A6.8LF Marking Equivalent Circuit (top view) CU 2 2014-03-01