Product Information

DF2S8.2FS,L3M

DF2S8.2FS,L3M electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD 1 Circuit 20pF 0.5uA 8.2V

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0341 ea
Line Total: USD 0.03

257 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
257 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.0347
10 : USD 0.0334
100 : USD 0.0274
1000 : USD 0.0246
2500 : USD 0.0212
10000 : USD 0.0183
20000 : USD 0.018
50000 : USD 0.018
100000 : USD 0.018

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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DF2S8.2FS ESD Protection Diodes Silicon Epitaxial Planar DF2S8.2FSDF2S8.2FSDF2S8.2FSDF2S8.2FS 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC The SOD-923 package is recommended. Package Product name SOD-923 DF2S8.2FS,L3M (Note 1) fSC DF2S8.2FS,L3J , DF2S8.2FS,L3F Note 1: The product name of the devices housed in the SOD-923 package are suffixed with the. Start of commercial production 2003-04 2014-07-09 1 Rev.3.0DF2S8.2FS 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) V 30 kV ESD Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25)) 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25)) aa aa V : Working peak reverse RWM voltage V : Zener voltage Z V : Reverse breakdown voltage BR Z : Dynamic impedance Z I : Zener current Z I : Reverse breakdown current BR I : Reverse current R V : Clamp voltage C I : Peak pulse current PP R : Dynamic resistance DYN I : Forward current F V : Forward voltage F Fig. Fig. Fig. Fig. 4.14.14.14.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V 6.5 V RWM Zener voltage V I = 5 mA 7.7 8.2 8.7 V Z Z (Reverse breakdown voltage) (V ) (I ) BR BR Dynamic impedance Z I = 5 mA 30 Z Z (I ) BR Reverse current I V = 6.5 V 0.5 A R RWM Total capacitance C V = 0 V, f = 1 MHz 20 pF t R 2014-07-09 2 Rev.3.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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