X-On Electronics has gained recognition as a prominent supplier of DF3A3.3FV(TPL3,Z) ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. DF3A3.3FV(TPL3,Z) ESD Suppressors / TVS Diodes are a product manufactured by Toshiba. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

DF3A3.3FV(TPL3,Z) Toshiba

DF3A3.3FV(TPL3,Z) electronic component of Toshiba
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Part No.DF3A3.3FV(TPL3,Z)
Manufacturer: Toshiba
Category: ESD Suppressors / TVS Diodes
Description: Diode Zener Dual Common Anode 3.3V 6% 150mW 3-Pin VESM T/R
Datasheet: DF3A3.3FV(TPL3,Z) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
638: USD 0.0637 ea
Line Total: USD 40.64 
Availability - 3270
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 638  Multiples: 1
Pack Size: 1
Availability Price Quantity
3270
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 638
Multiples : 1
638 : USD 0.0637
1000 : USD 0.0617
2000 : USD 0.0609

   
Manufacturer
Product Category
RoHS - XON
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Vz - Zener Voltage
Voltage Tolerance
Configuration
Mounting Style
Pin Count
Rev Curr
Operating Temperature Classification
Operating Temp Range
Rad Hardened
Knee Impedance
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We are delighted to provide the DF3A3.3FV(TPL3,Z) from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DF3A3.3FV(TPL3,Z) and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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DF3A3.3FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.3FV Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD). 1.20.05 0.80.05 * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. 1 2 The mounting of two devices on an ultra-compact package reduces the 3 number of parts and lowers assembly cost. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Power dissipation P* 150 mW Junction temperature T 150 C j 1. CATHODE1 Storage temperature range T 55 ~ 150 C stg 2. CATHODE2 VESM 3. ANODE Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA reliability significantly even if the operating conditions (i.e. TOSHIBA 1-1Q1B operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.0015 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on FR4 board (25.4 mm 25.4 mm 1.6 mmt) 0.5mm 0.45mm 0.45mm 0.4mm Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Zener voltage V I = 5 mA 3.1 3.3 3.5 V Z Z Dynamic impedance Z I = 5 mA 130 Z Z Reverse current I V = 1.5 V 100 A R R Terminal capacitance C V = 0, f = 1MHz 115 pF T R (between Cathode and Anode) 1 2007-11-01 1.20.05 0.80.05 0.50.05 0.4 0.4 0.220.05 0.130.05 0.320.05 DF3A3.3FV Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30 kV (Contact discharge) Criterion: No damage to device elements Marking Equivalent Circuit (top view) 3.3 CT - VR IZ - VZ 100 1000 Ta=25C f=1MHz Ta=25C 10 1 100 0.01 0.010 0 0.001 10 01 234 5 678 9 10 012 345 ZENER VOLTAGE VZ (V) REVERSE VOLTAGE VR (V) 2 2007-11-01 ZENER CURRENT IZ (mA) TOTAL CAPACITANCE CT (pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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