DF3A5.6F,LF Toshiba

DF3A5.6F TOSHIBA Diodes for Protecting against ESD DF3A5.6F Unit: mm Product for Use Only as Protection against Electrostatic Discharge (ESD) *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z The mounting of two devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Abusolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Power dissipation P 150 mW Junction temperature T 150 C 1. Cathode1 j 2. Cathode2 Storage temperature range T 55 to 150 C stg 3. Anode Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC TO-236MOD temperature, etc.) may cause this product to decrease in the JEITA SC-59 reliability significantly even if the operating conditions (i.e. operating 1-3G1E TOSHIBA temperature/current/voltage, etc.) are within the absolute maximum Weight : 12 mg (typ.) ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition MinTyp. Max Unit Zener voltage V I = 5 mA 5.6 6.0 V 5.3 Z Z Dynamic impedance Z I = 5 mA 40 Z Z Reverse current I V =2.5 V 1.0 A R R Terminal capacitance C V = 0 V, f = 1 MHz 65 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2005-12 1 2014-03-01 DF3A5.6F Marking Equivalent Circuit (Top View) 5.6 2 2014-03-01