DF3A5.6LFV(TPL3,Z) Toshiba

DF3A5.6LFV TOSHIBA Diodes for Protecting against ESD DF3A5.6LFV Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) 1.20.05 0.80.05 * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. 1 The mounting of two devices in an ultra-compact package enables a 2 3 reduction in the number of parts and in the mounting cost. Low terminal capacitance: C = 8.0 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Unit Characteristic Symbol Rating Power dissipation P 150* mW 1. CATHODE1 Junction temperature T 150 C VESM j 2. CATHODE2 3. ANODE Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 1-1Q1B reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 1.5 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mmt) 0.5 mm 0.45 mm 0.45 mm 0.4 mm Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 5.3 5.6 6.0 V Z Z Dynamic impedance Z I = 5 mA 3 Z Z Reverse current I V = 3.5 V 1.0 A R R Terminal capacitance C V = 0 V, f = 1 MHz 8 pF R T (between cathode and anode) Start of commercial production 2005-05 1 2014-03-01 1.20.05 0.80.05 0.50.05 0.4 0.4 0.22 0.05 0.13 0.05 0.32 0.05 DF3A5.6LFV Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8 kV (Contact discharge) Criterion: No damage to device elements Marking Equivalent Circuit (top view) Q2 Q1 AU C V T R I V Z Z 10 100 m Ta = 25C f = 1 MHz 10 m 1 m 100 10 1 1 4 6 0 1 2 4 0 1 2 3 5 7 8 9 10 3 5 6 7 ZENER VOLTAGE VZ (V) REVERSE VOLTAGE VR (V) 2 2014-03-01 ZENER CURRENT IZ (mA) TOTAL CAPACITANCE CT (pF)