X-On Electronics has gained recognition as a prominent supplier of DF2S6.8UFS,L3M ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. DF2S6.8UFS,L3M ESD Suppressors / TVS Diodes are a product manufactured by Toshiba. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

DF2S6.8UFS,L3M Toshiba

DF2S6.8UFS,L3M electronic component of Toshiba
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Part No.DF2S6.8UFS,L3M
Manufacturer: Toshiba
Category: ESD Suppressors / TVS Diodes
Description: Toshiba ESD Suppressors ESD Protection
Datasheet: DF2S6.8UFS,L3M Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
153: USD 0.0416 ea
Line Total: USD 6.36 
Availability - 0
MOQ: 153  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 10000
Multiples : 1
10000 : USD 0.0539
20000 : USD 0.0496
50000 : USD 0.0444

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9062
10 : USD 0.6835
100 : USD 0.1554
500 : USD 0.1025
1000 : USD 0.0704
2500 : USD 0.0653
10000 : USD 0.0621

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 153
Multiples : 1
153 : USD 0.0416
250 : USD 0.0391

   
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We are delighted to provide the DF2S6.8UFS,L3M from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DF2S6.8UFS,L3M and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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DF2S6.8UFS ESD Protection Diodes Silicon Epitaxial Planar DF2S6.8UFSDF2S6.8UFSDF2S6.8UFSDF2S6.8UFS 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC The SOD-923 package is recommended. Package Product name SOD-923 DF2S6.8UFS,L3M (Note 1) fSC DF2S6.8UFS,L3J , DF2S6.8UFS,L3F Note 1: The product name of the devices housed in the SOD-923 package are suffixed with the. Start of commercial production 2007-01 2014-07-23 1 Rev.5.0DF2S6.8UFS 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) V 8 kV ESD Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25)) 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25)) aa aa V : Working peak reverse RWM voltage V : Reverse breakdown voltage BR V : Reverse voltage R I : Reverse breakdown current BR I : Reverse current R V : Clamp voltage C I : Peak pulse current PP R : Dynamic resistance DYN I : Forward current F V : Forward voltage F Fig. Fig. Fig. Fig. 4.14.14.14.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (1) 5 V RWM Reverse breakdown voltage V (1) I = 1 mA 5.3 6.8 V BR BR Reverse current I (1) V = 5 V 0.1 A R RWM Dynamic resistance R (Note 1) 0.3 DYN Total capacitance C V = 0 V, f = 1 MHz 1.6 pF t R Working peak reverse voltage V (2) 19 V RWM Reverse breakdown voltage V (2) I = 1 mA 22 25 V BR BR Reverse current I (2) V = 19 V 0.5 A R RWM Note 1: TLP parameter: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using a least-squares fit of TLP characteristics at I between 3 A to 8 A. PP 2014-07-23 2 Rev.5.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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