DF2S6P2CTC,L3F Toshiba

DF2S6P2CTC ESD Protection Diodes Silicon Epitaxial Planar DF2S6P2CTCDF2S6P2CTCDF2S6P2CTCDF2S6P2CTC 1. 1. GeneralGeneral 1. 1. GeneralGeneral The DF2S6P2CTC is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. The DF2S6P2CTC has realized high I , in order to protect a semiconductor devices from the indirect lightning PP stroke and the transition voltage (at the time of power activation). Furthermore, the DF2S6P2CTC is housed in an ultra-compact package (1.6 mm 0.8 mm) to meet applications that require a small footprint. 2. 2. 2. 2. ApplicationsApplicationsApplicationsApplications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Suitable for use with a 5.0 V signal line. (V 5.5 V) RWM (2) Protects devices with its high ESD performance. (V = 30 kV (Contact / Air) IEC61000-4-2) ESD (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (R = 0.08 (typ.)) DYN (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (V = 18 V I = 80 A (typ.)) C PP (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (1.6 mm 0.8 mm size (Nickname: CST2C)) 4. 4. 4. 4. PackagingPackagingPackagingPackaging CST2C Start of commercial production 2018-04 2017-2018 2018-05-09 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0DF2S6P2CTC 5. 5. 5. 5. Example of Circuit DiagramExample of Circuit DiagramExample of Circuit DiagramExample of Circuit Diagram 6. 6. 6. 6. Quick Reference DataQuick Reference DataQuick Reference DataQuick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (Note 1) 5.5 V RWM Dynamic resistance R (Note 2) 0.08 DYN Electrostatic discharge voltage V (Note 3) 30 kV ESD (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 16 A and I = 30 A. PP1 PP2 Note 3: Criterion: No damage to devices. 6.1. 6.1. 6.1. 6.1. ESD Clamp Waveform (Note)ESD Clamp Waveform (Note)ESD Clamp Waveform (Note)ESD Clamp Waveform (Note) Fig. Fig. Fig. Fig. 6.1.16.1.16.1.16.1.1 +8 kV+8 kV+8 kV+8 kV Fig. Fig. Fig. Fig. 6.1.26.1.26.1.26.1.2 -8 kV-8 kV-8 kV-8 kV Fig. Fig. Fig. Fig. 6.1.36.1.36.1.36.1.3 IEC61000-4-2 (Contact)IEC61000-4-2 (Contact)IEC61000-4-2 (Contact)IEC61000-4-2 (Contact) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2017-2018 2018-05-09 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0