X-On Electronics has gained recognition as a prominent supplier of DF2S6M4CT,L3F ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. DF2S6M4CT,L3F ESD Suppressors / TVS Diodes are a product manufactured by Toshiba. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

DF2S6M4CT,L3F Toshiba

DF2S6M4CT,L3F electronic component of Toshiba
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Part No.DF2S6M4CT,L3F
Manufacturer: Toshiba
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes ESD protection diode .5pF 5.6V
Datasheet: DF2S6M4CT,L3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1298 ea
Line Total: USD 0.65 
Availability - 8053
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
8053
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1298
50 : USD 0.1019
150 : USD 0.0879
500 : USD 0.0772

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DF2S6M4CT,L3F from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DF2S6M4CT,L3F and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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DF2S6M4CT ESD Protection Diodes Silicon Epitaxial Planar DF2S6M4CTDF2S6M4CTDF2S6M4CTDF2S6M4CT 1. 1. GeneralGeneral 1. 1. GeneralGeneral The DF2S6M4CT is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2S6M4CT provides low dynamic resistance and superior protective performance. Furthermore, it is optimum the high speed signal application for the low capacitance performance. The DF2S6M4CT is housed in an ultra-compact package (1.0 mm 0.6 mm) to meet applications that require a small footprint. 2. 2. 2. 2. ApplicationsApplicationsApplicationsApplications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Suitable for use with a 5 V signal line. (V 5.5 V) RWM (2) Protects devices with its high ESD performance. (V = 20 kV (Contact / Air) IEC61000-4-2) ESD (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (R = 0.3 (typ.)) DYN (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (V = 9 V I = 2 A (typ.)) C PP (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (1.0 mm 0.6 mm size (Nickname: CST2)) 4. 4. 4. 4. PackagingPackagingPackagingPackaging CST2 Start of commercial production 2016-12 2016-2018 2018-01-23 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0DF2S6M4CT 5. 5. 5. 5. Example of Circuit DiagramExample of Circuit DiagramExample of Circuit DiagramExample of Circuit Diagram 6. 6. 6. 6. Quick Reference DataQuick Reference DataQuick Reference DataQuick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (Note 1) 5.5 V RWM Total capacitance C V = 0 V, f = 1 MHz 0.35 0.5 pF t R Dynamic resistance R (Note 2) 0.3 DYN Electrostatic discharge voltage V (Note 3) 20 kV ESD (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 8 A and I = 16 A. PP1 PP2 Note 3: Criterion: No damage to devices. 2016-2018 2018-01-23 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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