X-On Electronics has gained recognition as a prominent supplier of DF3D6.8MFV(TL3,T) ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. DF3D6.8MFV(TL3,T) ESD Suppressors / TVS Diodes are a product manufactured by Toshiba. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

DF3D6.8MFV(TL3,T) Toshiba

DF3D6.8MFV(TL3,T) electronic component of Toshiba
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Part No.DF3D6.8MFV(TL3,T)
Manufacturer: Toshiba
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes ESD Low Cap Diode 0.5pF 0.5uA 6.0V
Datasheet: DF3D6.8MFV(TL3,T) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.4647
10 : USD 0.3103
100 : USD 0.173
1000 : USD 0.1266
2500 : USD 0.1087
8000 : USD 0.1067
24000 : USD 0.1067
48000 : USD 0.1055
96000 : USD 0.1009
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Capacitance
Current Rating
Operating Temperature Range
Brand
Channels
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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We are delighted to provide the DF3D6.8MFV(TL3,T) from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DF3D6.8MFV(TL3,T) and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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DF3D6.8MS ESD Protection Diodes Silicon Epitaxial Planar DF3D6.8MSDF3D6.8MSDF3D6.8MSDF3D6.8MS 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: I/O 1 2: I/O 2 3: GND SSM 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25))) a aaa Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) V 8 kV ESD Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2013-09 2014-10-16 1 Rev.4.0DF3D6.8MS 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa V : Working peak reverse RWM voltage V : Reverse breakdown voltage BR I : Reverse breakdown current BR I : Reverse current R V : Clamp voltage C I : Peak pulse current PP R : Dynamic resistance DYN I : Forward current F V : Forward voltage F Fig. Fig. Fig. Fig. 4.14.14.14.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V 5 V RWM Reverse breakdown voltage V I = 5 mA 6 V BR BR Reverse current I V = 5 V 0.5 A R RWM Clamp voltage V (Note 1) I = 1 A 11 V C PP Input/output-to-ground capacitance C (Note 2) V = 0 V, f = 1 MHz 0.5 0.9 pF t-GND R (Between I/O and GND pins) Input/output-to-ground capacitance C V = 0 V, f = 1 MHz 0.01 t-GND R difference (Between I/O and GND pins) Total capacitance C (Note 2) V = 0 V, f = 1 MHz 0.22 0.5 pF t R (Between I/O and I/O pins) Note 1: Based on IEC61000-4-5 8/20 s pulse. Note 2: Guaranteed by design. 5. Guaranteed ESD Protection (Note) 5. 5. 5. Guaranteed ESD Protection (Note)Guaranteed ESD Protection (Note)Guaranteed ESD Protection (Note) Test Condition ESD Protection IEC61000-4-2 (Contact discharge) 8 kV Note: Criterion: No damage to devices. 2014-10-16 2 Rev.4.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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