NXH160T120L2Q2F2S1G Split T-Type NPC Power Module 1200 V, 160 A IGBT, 650 V, 100 A IGBT The NXH160T120L2Q2F2S1G is a power module containing a split T type neutral point clamped threelevel inverter, consisting of www.onsemi.com two 160 A / 1200 V Half Bridge IGBTs with inverse diodes, two Neutral Point 120 A / 650 V rectifiers, two 100 A / 650 V Neutral Point IGBTs with inverse diodes, two Half Bridge 60 A / 1200 V rectifiers and a negative temperature coefficient thermistor (NTC). Features Split Ttype Neutral Point Clamped Threelevel Inverter Module 1200 V IGBT Specifications: V = 2.15 V, E = 4300 J CE(SAT) SW 650 V IGBT specifications: V = 1.47 V, E = 2560 J CE(SAT) SW Baseplate Q2PACK Solderable Pins CASE 180AK Thermistor Typical Applications MARKING DIAGRAM Solar Inverters NXH160T120L2Q2F2S1G Uninterruptible Power Supplies ATYYWW 2732 16 NXH160T120L2Q2F2S1G = Device Code YYWW = Year and Work Week Code T1 A = Assembly Site Code HALF BRIDGE D1 HALF BRIDGE FREEWHEEL DIODE HALF BRIDGE T = Test Site Code IGBT D5 INVERSE DIODE 56 NEUTRAL POINT G = PbFree Package INVERSE DIODE D2 55 D6 4449 710 NEUTRAL POINT T2 FREEWHEEL DIODE NEUTRAL PIN CONNECTIONS POINT IGBT 52 51 50 33 34 NEUTRAL 35 POINT IGBT NEUTRAL POINT FREEWHEEL DIODE 2326 T3 3843 D7 T4 NEUTRAL POINT D8 HALF BRIDGE D3 INVERSE DIODE D4 HALF BRIDGE IGBT FREEWHEEL DIODE HALF BRIDGE 36 INVERSE DIODE 37 53 54 NTC ORDERING INFORMATION 1116 1722 See detailed ordering and shipping information on page 5 of this data sheet. Figure 1. NXH160T120L2Q2F2S1G Schematic Diagram Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: May, 2019 Rev. 0 NXH160T120L2Q2F2S1/DNXH160T120L2Q2F2S1G Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25C unless otherwise noted J Rating Symbol Value Unit HALF BRIDGE IGBT CollectorEmitter Voltage V 1200 V CES GateEmitter Voltage V 20 V GE Continuous Collector Current T = 80C ( T = 175C) I 181 A h J C Pulsed Collector Current (T = 175C) I 543 A J Cpulse Maximum Power Dissipation T = 80C (T = 175C) P 500 W h J tot Short Circuit Withstand Time V = 15 V, V = 600 V, T 150C T 5 s GE CE J sc Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX NEUTRAL POINT IGBT CollectorEmitter Voltage V 650 V CES GateEmitter Voltage V 20 V GE Continuous Collector Current T = 80C (T = 175C) I 116 A h J C Pulsed Collector Current (T = 175C) I 348 A J Cpulse Maximum Power Dissipation T = 80C (T = 175C) P 232 W h J tot Short Circuit Withstand Time V = 15 V, V = 400 V, T 150C T 5 s GE CE J sc Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX HALF BRIDGE FREEWHEEL DIODE Peak Repetitive Reverse Voltage V 1200 V RRM Continuous Forward Current T = 80C (T = 175C) I 56 A h J F Repetitive Peak Forward Current (T = 175C, t limited by T ) I 150 A J p Jmax FRM Maximum Power Dissipation T = 80C (T = 175C) P 142 W h J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX HALF BRIDGE INVERSE DIODE Peak Repetitive Reverse Voltage V 1200 V RRM Continuous Forward Current T = 80C (T = 175C) I 19 A h J F Repetitive Peak Forward Current (T = 175C, t limited by T ) I 50 A J p Jmax FRM Maximum Power Dissipation T = 80C (T = 175C) P 63 W h J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX NEUTRAL POINT FREEWHEEL DIODE Peak Repetitive Reverse Voltage V 650 V RRM Continuous Forward Current T = 80C (T = 175C) I 132 A h J F Repetitive Peak Forward Current (T = 175C, t limited by T ) I 300 A J p Jmax FRM Maximum Power Dissipation T = 80C (T = 175C) P 198 W h J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX NEUTRAL POINT INVERSE DIODE Peak Repetitive Reverse Voltage V 650 V RRM Continuous Forward Current T = 80C (T = 175C) I 38 A h J F Repetitive Peak Forward Current (T = 175C, t limited by T ) I 110 A J p Jmax FRM Maximum Power Dissipation T = 80C (T = 175C) P 79 W h J tot Minimum Operating Junction Temperature T 40 C JMIN www.onsemi.com 2