TMPIM 35 A CIB/CI Module Product Preview NXH35C120L2C2SG/S1G The NXH35C120L2C2SG is a transfermolded power module containing a converterinverterbrake circuit consisting of six 35 A, 1600 V rectifiers, six 35 A, 1200 V IGBTs with inverse diodes, one 35 A, 1200 V brake IGBT with brake diode and an NTC thermistor. www.onsemi.com The NXH35C120L2C2S1G is a transfermolded power module containing a converterinverter circuit consisting of six 35 A, 1600 V rectifiers, six 35 A, 1200 V IGBTs with inverse diodes, and an NTC thermistor. Features Low Thermal Resistance 6 mm Clearance Distance from Pin to Heatsink Compact 73 mm 40 mm 8 mm Package Solderable Pins Thermistor TMPIM DIP52 These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 181AD Compliant Typical Applications MARKING DIAGRAM Industrial Motor Drives Servo Drives DBPLUS P GUP GVP GWP R S B U V W T GB GUN GVN GWN TH1 TH2 DBMINUS NB NU NV NW ORDERING INFORMATION Figure 1. NXH35C120L2C2SG Schematic Diagram Device Package Shipping DBPLUS P NXH35C120L2C2SG TMPIM 6 Units / DIP52 Tube (PbFree) NXH35C120L2C2S1G TMPIM 6 Units / GUP GVP GWP R DIP52 Tube (PbFree) S U V W T GUN GVN GWN This document contains information on a product under TH1 development. ON Semiconductor reserves the right to change or discontinue this product without notice. TH2 DBMINUS NU NV NW Figure 2. NXH35C120L2C2S1G Schematic Diagram Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: January, 2020 Rev. P1 NXH35C120L2C2/DNXH35C120L2C2SG/S1G MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit IGBT CollectorEmitter Voltage V 1200 V CES GateEmitter Voltage V 20 V GE Continuous Collector Current T = 80C (T = 175C) I 35 A c VJmax C Pulsed Collector Current I 105 A Cpulse DIODE Peak Repetitive Reverse Voltage V 1200 V RRM Continuous Forward Current T = 80C (T = 175C) I 35 A c VJmax F Repetitive Peak Forward Current (T = 175C) I 105 A J FRM 2 2 2 I t Value (60 Hz single halfsine wave) I t 46 A t RECTIFIER DIODE Peak Repetitive Reverse Voltage V 1600 V RRM Continuous Forward Current T = 80C (T = 150C) I 35 A c VJmax F Repetitive Peak Forward Current (T = 150C) I 105 A J FRM 2 2 2 I t Value I t A t (60 Hz single halfsine wave) 25C 1126 (60 Hz single halfsine wave) 150C 510 Surge Current (10 ms sin180) 25C I 520 A FSM THERMAL PROPERTIES Storage Temperature Range T 40 to +125 C stg INSULATION PROPERTIES Isolation Test Voltage, t = 1 s, 50 Hz V 3000 V is RMS Internal Isolation AI2O3 Creepage Distance 6.0 mm Clearance Distance 6.0 mm Comperative Tracking Index CTI > 400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. www.onsemi.com 2