TMPIM 50 A CIB/CI Module NXH50C120L2C2ESG, NXH50C120L2C2ES1G The NXH50C120L2C2ESG is a transfermolded power module with low thermal resistance substrate containing aconverter-inverter-brake circuit consisting of six 50A, 1600V rectifiers, six 50 A, 1200 V IGBTs with inverse diodes, one 35 A, www.onsemi.com 1200 V brake IGBT with brake diode and an NTC thermistor. The NXH50C120L2C2ES1G is a transfermolded power module with low thermal resistance substrate containing a converterinverter circuit consisting of six 50 A, 1600 V rectifiers, six 50 A, 1200 V IGBTs with inverse diodes, and an NTC thermistor. Features Low Thermal Resistance Substrate for Low Thermal Resistance Lower Package Height than Standard Case Modules 6 mm Clearance distance between pin to heatsink Compact 73 mm 40 mm 8 mm Package DIP26 67.8x40 CASE 181AD Solderable Pins Thermistor MARKING DIAGRAM These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Industrial Motor Drives Servo Drives DBPLUS P GUP GVP GWP R S B U V W T GB GUN GVN GWN TH1 TH2 ORDERING INFORMATION DBMINUS NB NU NV NW Figure 1. NXH50C120L2C2ESG Schematic Diagram Device Package Shipping DBPLUS P NXH50C120L2C2ESG DIP26 6 Units / (PbFree) Tube NXH50C120L2C2ES1G GUP GVP GWP R S U V W T GUN GVN GWN TH1 TH2 DBMINUS NU NV NW Figure 2. NXH50C120L2C2ES1G Schematic Diagram Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: October, 2020 Rev. 1 NXH50C120L2C2/DNXH50C120L2C2ESG, NXH50C120L2C2ES1G MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit IGBT (INVERTER, BRAKE) Collector-emitter Voltage V 1200 V CES Gate-emitter Voltage V 20 V GE Inverter IGBT Continuous Collector Current T = 100C (T = 175C) I 50 A C VJmax C Inverter IGBT Pulsed Collector Current (T = 175C) I 150 A VJmax Cpulse Brake IGBT Continuous Collector Current T = 100C (T = 175C) I 35 A C VJmax C Brake IGBT Pulsed Collector Current (T = 175C) I 105 A VJmax Cpulse DIODE (INVERTER, BRAKE) Peak Repetitive Reverse Voltage V 1200 V RRM Inverter Diode Continuous Forward Current T = 80C (Tv = 17C) I 50 A c Jmax F Inverter Diode Repetitive Peak Forward Current (T = 175C) I 150 A VJmax FRM 2 2 2 Inverter Diode I t value (60 Hz single halfsine wave) I t 94 A t Brake Diode Continuous Forward Current Tc = 80C (T = 175C) I 35 A VJmax F Brake Diode Repetitive Peak Forward Current (T = 175C) I 105 A VJmax FRM 2 2 Brake Diode I2t value (60 Hz single half sine wave) I t 46 A t RECTIFIER DIODE Peak Repetitive Reverse Voltage V 1600 V RRM Continuous Forward Current T = 80C (T = 150C) I 50 A C VJmax F Repetitive Peak Forward Current (T = 150C) I 150 A VJmax FRM 2 o 2 2 I t value (60 Hz single halfsine wave) 25 C I t 1126 A t o (60 Hz single halfsine wave) 150 C 510 o o Surge current (10ms sin180 ) 25 C IFSM 520 A MODULE THERMAL PROPERTIES Storage Temperature Range T 40 to 125 C stg INSULATION PROPERTIES Isolation Test Voltage, t = 1 s, 50 Hz V 3000 V is RMS Internal Isolation HPS Creepage Distance 6.0 mm Clearance Distance 6.0 mm Comperative Tracking Index CTI >400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. www.onsemi.com 2