Q0PACK Module Product Preview NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G The NXH80T120L3Q0S3/P3G is a power module containing a www.onsemi.com Ttype neutral point clamped (NPC) three level inverter stage. The integrated field stop trench IGBTs and fast recovery diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features Low Switching Loss Low V CESAT Compact 65.9 mm x 32.5 mm x 12 mm Package Q0PACK Q0PACK Options with Preapplied Thermal Interface Material (TIM) and CASE 180AA CASE 180AB Without Preapplied TIM PRESSFIT PINS SOLDERABLE PINS Options with Solderable Pins and Pressfit Pins Thermistor Typical Applications MARKING DIAGRAMS Solar Inverter NXH80T120L3Q0S3xG ATYYWW Uninterruptable Power Supplies 15,16 NXH80T120L3Q0P3G Half Bridge ATYYWW IGBTs & Diodes T1 D1 17 18 NXH80T120L3Q0S3G = Specific Device Code D2 D3 S3xG = S3G or S3TG 5,14 8,9,10,11 G = Pbfree Package A = Assembly Site Code T = Test Site Code T3 T2 YYWW = Year and Work Week Code 76 13 12 Neutral Point IGBTs & Diodes PIN ASSIGNMENTS D4 T4 2 1 12 13 14 15 16 17 18 19 20 11 3,4 19 NTC 10 9 20 Figure 1. Schematic Diagram 8 7 6 5 4 3 2 1 This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. ORDERING INFORMATION See detailed ordering and shipping information in the dimensions section on page 16 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: May, 2020 Rev. P3 NXH80T120L3Q0S3G/DNXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G Table 1. MAXIMUM RATINGS Rating Symbol Value Unit HALF BRIDGE IGBT CollectorEmitter Voltage V 1200 V CES GateEmitter Voltage V 20 V GE Continuous Collector Current T = 80C (T = 175C) I 75 A c J C Pulsed Collector Current (T = 175C) I 225 A J Cpulse Maximum Power Dissipation (T = 175C) P 188 W J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 175 C JMAX NEUTRAL POINT IGBT CollectorEmitter Voltage V 650 V CES GateEmitter Voltage V 20 V GE Continuous Collector Current T = 80C (T = 175C) I 50 A c J C Pulsed Collector Current (T = 175C) I 150 A J Cpulse Maximum Power Dissipation (T = 175C) P 82 W J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX HALF BRIDGE DIODE Peak Repetitive Reverse Voltage V 1200 V RRM Continuous Forward Current T = 80C (T = 175C) I 37 A c J F Repetitive Peak Forward Current (T = 175C) I 111 A J FRM Maximum Power Dissipation (T = 175C) P 79 W J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 175 C JMAX NEUTRAL POINT DIODE Peak Repetitive Reverse Voltage V 650 V RRM Continuous Forward Current T = 80C (T = 175C) I 37 A c J F Repetitive Peak Forward Current (T = 175C) I 111 A J FRM Maximum Power Dissipation (T = 175C) P 68 W J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX THERMAL PROPERTIES Maximum Operating Junction Temperature under Switching Conditions T 150 C VJOP Storage Temperature Range T 40 to 125 C stg Storage Temperature Range (TIM) T 25 to 40 C stg INSULATION PROPERTIES Isolation test voltage, t = 1 sec, 50 Hz V 4000 V is RMS Creepage distance 12.7 mm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. www.onsemi.com 2