X-On Electronics has gained recognition as a prominent supplier of NZQA6V8AXV5T1G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. NZQA6V8AXV5T1G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

NZQA6V8AXV5T1G ON Semiconductor

Hot NZQA6V8AXV5T1G electronic component of ON Semiconductor
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Part No.NZQA6V8AXV5T1G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes Low Cap. TVS Quad Array for ESD
Datasheet: NZQA6V8AXV5T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0839 ea
Line Total: USD 0.08 
Availability - 2479
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2479
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0839

330
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2207
50 : USD 0.1694
150 : USD 0.1474
500 : USD 0.12
2500 : USD 0.1076
4000 : USD 0.1004

7658
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2887
10 : USD 0.1963
100 : USD 0.1051
1000 : USD 0.0958

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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We are delighted to provide the NZQA6V8AXV5T1G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NZQA6V8AXV5T1G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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NZQA5V6AXV5 Series ESD Protection Diode Low Clamping Voltage This integrated surge protection device is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, www.onsemi.com communication systems, medical equipment, and other applications. Its integrated design provides very effective and reliable protection for 1 5 four separate lines using only one package. These devices are ideal for situations where board space is at a premium. Features 2 Low Clamping Voltage 3 4 Small SOT553 SMT Package Stand Off Voltage: 3 V Low Leakage Current Four Separate Unidirectional Configurations for Protection ESD Protection: IEC6100042: Level 4 ESD Protection SCALE 4:1 MILSTD 883C Method 30156: Class 3 SOT553 Complies to USB 1.1 Low Speed & Full Speed Specifications CASE 463B These are PbFree Devices PLASTIC Benefits Provides Protection for ESD Industry Standards: IEC 61000, HBM Protects Four Lines Against Transient Voltage Conditions MARKING DIAGRAM Minimize Power Consumption of the System Minimize PCB Board Space Typical Applications xx M Instrumentation Equipment Serial and Parallel Ports Microprocessor Based Equipment xx = Device Code Notebooks, Desktops, Servers M = Date Code* Cellular and Portable Equipment = PbFree Package (Note: Microdot may be in either location) MAXIMUM RATINGS (T = 25C unless otherwise noted) A Characteristic Symbol Value Unit Peak Power Dissipation (Note 1) P 20 W PK ORDERING INFORMATION Steady State Power 1 Diode (Note 2) P 380 mW D Device Package Shipping Thermal Resistance, R 327 C/W JA JunctiontoAmbient 3.05 mW/C NZQA5V6AXV5T1 SOT553* 4000/Tape & Reel Above 25C, Derate NZQA5V6AXV5T1G SOT553* 4000/Tape & Reel Maximum Junction Temperature T 150 C Jmax Operating Junction and Storage T T 55 to +150 C J stg NZQA6V8AXV5T1 SOT553* 4000/Tape & Reel Temperature Range Lead Solder Temperature (10 seconds T 260 C NZQA6V8AXV5T1G SOT553* 4000/Tape & Reel L duration) NZQA6V8AXV5T3 SOT553* 16000/Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NZQA6V8AXV5T3G SOT553* 16000/Tape & Reel assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current per Figure 5. For information on tape and reel specifications, 2. Only 1 diode under power. For all 4 diodes under power, P will be 25%. D including part orientation and tape sizes, please Mounted on FR 4 board with min pad. refer to our Tape and Reel Packaging Specification See Application Note AND8308/D for further description of Brochure, BRD8011/D. survivability specs. *This package is inherently PbFree. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: November, 2017 Rev. 8 NZQA5V6AXV5/DNZQA5V6AXV5 Series ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T V Maximum Temperature Coefficient of V BR BR I PP I Forward Current F UniDirectional V Forward Voltage I F F Z Maximum Zener Impedance I ZT ZT I Reverse Current ZK Z Maximum Zener Impedance I ZK ZK *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C) A Typ Typ Capacitance Capacitance Breakdown Leakage 0 V Bias 3 V Bias (pF) (pF) Voltage Current V Max I C PP (Note 4) (Note 3) (Note 3) V 1 mA (V) I V V BR RM RM C Per I V I IEC6100042 Device RWM C PP ( A) (V) (A) (Note 5) Device Marking Min Nom Max V Typ Max Typ Max RWM NZQA5V6AXV5 5P 5.3 5.6 5.9 3.0 1.0 13 1.6 13 17 7.0 11.5 Figures 1 and 2 (See Below) NZQA6V8AXV5 6H 6.47 6.8 7.14 4.3 1.0 13 1.6 12 15 6.7 9.5 3. Capacitance of one diode at f = 1 MHz, V = 0 V, T = 25C R A 4. Surge current waveform per Figure 5. 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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