RB521S30 Schottky Barrier Diode, 30 V These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for handheld and portable applications where space is limited. www.onsemi.com Features Extremely Fast Switching Speed 30 V SCHOTTKY Extremely Low Forward Voltage 0.5 V (max) I = 200 mA F BARRIER DIODE Low Reverse Current NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOD523 These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 502 Compliant* 1 2 MAXIMUM RATINGS CATHODE ANODE Rating Symbol Value Unit MARKING DIAGRAM Reverse Voltage V 30 Vdc R Forward Current DC I 200 mA F 5M M Peak Forward Surge Current (Note 1) I 1.0 A FSM 12 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 5M = Device Code assumed, damage may occur and reliability may be affected. M = Date Code* 1. 60 Hz for 1 cycle. = PbFree Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS *Date Code orientation may vary depending up- Characteristic Symbol Max Unit on manufacturing location. Total Device Dissipation FR5 Board, P D (Note 2) T = 25C 200 mW A ORDERING INFORMATION Derate above 25C 1.57 mW/C Device Package Shipping Thermal Resistance, R C/W JA JunctiontoAmbient 635 RB521S30T1G SOD523 3000/Tape & Reel (PbFree) Junction and Storage Temperature T , T 55 to +125 C J stg Range NSVRB521S30T1G SOD523 3000/Tape & Reel 2. FR5 Minimum Pad. (PbFree) RB521S30T5G SOD523 8000/Tape & Reel *For additional information on our PbFree strategy and soldering details, please (PbFree) download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NSVRB521S30T5G SOD523 8000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: September, 2018 Rev. 11 RB521S30T1/DRB521S30 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage (V = 10 V) I 30.0 A R R Forward Voltage (I = 200 mA) V 0.50 Vdc F F 1 T = 125C A 100m T = 75C A 10m 1m 100 T = 25C A 10 T = 25C A 1 0 0.1 0.2 0.3 0.4 0.5 0.6 V , FORWARD VOLTAGE (V) F Figure 1. Forward Characteristics 10m 1m T = 125C A 100 T = 75C A 10 1 T = 25C A 100n T = 25C A 10n 1n 0 510 15 20 25 30 V , REVERSE VOLTAGE (VOLTS) R Figure 2. Reverse Characteristics 20 18 16 14 12 10 8 6 4 2 0 0 510 15 20 25 30 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Total Capacitance www.onsemi.com 2 C , TOATAL CAPACITANCE (pF) I , FORWARD CURRENT (A) I , REVERSE CURRENT (A) T R F