SB007-03C-TB-E ON Semiconductor

LOT No. LOT No. Ordering number : ENA0405B SB007-03C Schottky Barrier Diode SB007-03C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =20A, Tj=25C 30 V R R Forward Voltage V I =70mA, Tj=25C 0.55 V F F Reverse Current I V =15V, Tj=25C 5 A R R Interterminal Capacitance C V =10V, f-1MHz 3.0 pF R Reverse Recovery Time t I =I =10mA, Tj=25C, See speci ed Test Circuit. 10 ns rr F R Rth(j-a)1 620 C / W 2 Thermal Resistance Mounted in Cu-foiled area of 16mm 0.2mm Rth(j-a)2 430 C / W on glass epoxy board t Test Circuit rr Duty10% 50 100 10 10s 5V t rr Ordering Information Device Package Shipping memo SB007-03C-TB-E CP 3,000pcs./reel Pb Free I -- V I -- V F F R R 2 1000 5 100 2 7 100 5 5 3 2 2 10 5 10 2 7 1.0 5 5 3 2 2 0.1 5 1.0 2 7 5 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 152025 30 35 Forward Voltage, V -- V ID00240 Reverse Voltage, V -- V ID00241 F R C -- V I -- t R FSM 3 2.8 f=1MHz Current waveform 50Hz sine wave 2 2.4 I S 20ms 2.0 10 t 7 1.6 5 1.2 3 0.8 2 0.4 1.0 0 2 35 7 23257 3 23 5 7 2 35 1.0 10 0.01 0.1 1.0 Reverse Voltage, V -- V ID00242 ID00243 Time, t -- s R No.A0405-2/5 75C 25C 50C 100C Ta=125C Ta=125C 25C Interterminal Capacitance, C -- pF Forward Current, I -- mA F 10mA 10mA 1.0mA Surge Forward Current, I (Peak) -- A Reverse Current, I -- A FSM R