SB05-05C-TB-E ON Semiconductor

LOT No. LOT No. Ordering number : ENA0409A SB05-05C Schottky Barrier Diode SB05-05C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =200A, Tj=25C 50 V R R Forward Voltage V I =500mA, Tj=25C 0.55 V F F Reverse Current I V =25V, Tj=25C 50 A R R Interterminal Capacitance C V =10V, f=1MHz 17 pF R Reverse Recovery Time t I =I =100mA, Tj=25C, See speci ed Test Circuit. 10 ns rr F R Rth(j-a)1 420 C / W 2 Thermal Resistance Mounted in Cu-foiled area of 16mm 0.2mm Rth(j-a)2 330 C / W on glass epoxy board t Test Circuit rr Duty10% 50 100 10 10s 5V t rr Ordering Information Device Package Shipping memo SB05-05C-TB-E CP 3,000pcs./reel Pb Free I -- V I -- V F F R R 5 5 2 3 1000 2 5 1.0 2 7 100 5 5 3 2 2 10 0.1 5 7 2 5 1.0 3 5 2 2 0.01 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 70 ID00339 Forward Voltage, V -- V Reverse Voltage, V -- V ID00340 F R P (AV) -- I C -- V F O R 600 2 f=1MHz (1)Rectangular wave =60 (2)Rectangular wave =120 500 100 (3)Rectangular wave =180 7 (4)Sine wave =180 (4) (3) 400 5 Rectangular (2) wave 3 300 (1) 2 360 200 10 Sine wave 7 100 5 180 360 0 3 0 100 200 300 400 500 600 23527 3 57 1.0 10 100 Average Output Current, I -- A ID00341 Reverse Voltage, V -- V ID00342 O R No.A0409-2/6 25C 75C Ta=125C 100C 50C Ta=125C 25C Average Forward Power Dissipation, P (AV) -- mW Forward Current, I -- A F F 100mA 100mA 10mA Interterminal Capacitance, C -- pF Reverse Current, I -- A R