SB07-03C-TB-H ON Semiconductor

LOT No. LOT No. Ordering number : EN2997C SB07-03C Schottky Barrier Diode SB07-03C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =300A30 V R R Forward Voltage V I =700mA 0.55 V F F Reverse Current I V =15V 80 A R R Interterminal Capacitance C V =10V, f=1MHz 25 pF R Reverse Recovery Time t I =I =100mA, See speci ed Test Circuit. 10 ns rr F R Rth(j-a)1 420 C / W 2 Thermal Resistance Mounted in Cu-foiled area of 16mm 0.2mm Rth(j-a)2 330 C / W on glass epoxy board t Test Circuit rr Duty10% 50 100 10 10s --5V t rr Ordering Information Device Package Shipping memo SB07-03C-TB-E CP 3,000pcs./reel Pb Free I -- V I -- V F F R R 5 5 2 3 2 1000 5 1.0 2 7 100 5 5 3 2 2 10 0.1 5 7 2 5 1.0 3 5 2 2 0.01 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 510 15 20 25 30 35 Forward Voltage, V -- V ID00383 Reverse Voltage, V -- V ID00384 F R P (AV) -- I C -- V F O R 1.0 2 (1)Rectangular wave =60 f=1MHz (2)Rectangular wave =120 100 (3)Rectangular wave =180 0.8 (4)Sine wave =180 7 5 Rectangular 0.6 (4) wave (3) 3 (2) 2 (1) 0.4 360 10 Sine wave 0.2 7 5 180 360 0 3 0 0.2 0.4 0.6 0.8 1.0 1.2 2 35 7 2 3 5 7 1.0 10 Average Output Current, I -- A ID00385 ID00386 Reverse Voltage, V -- V O R No.2997-2/6 75C 25C 100C Ta=125C 50C Ta=125C 25C Average Forward Power Dissipation, P (AV) -- W Forward Current, I -- A F F 100mA 100mA 10mA Interminal Capacitance, C -- pF Reverse Current, I -- A R