SB1003M3-TL-W ON Semiconductor

LOT No. LOT No. Ordering number : ENA8375B SB1003M3 Schottky Barrier Diode SB1003M3 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =0.5mA 30 V R R V 1 I =0.7A 0.45 0.50 V F F Forward Voltage V 2 I =1.0A 0.48 0.53 V F F Reverse Current I V =16V 15 mA R R Interterminal Capacitance C V =10V, f=1MHz 27 pF R Reverse Recovery Time t I =I =100mA, See specified Test Circuit. 10 ns rr F R When mounted in Cu-foiled area of Rth(j-a)1 94.7 C / W 2 0.72mm 0.03mm on glass epoxy substrate Thermal Resistance 2 Rth(j-a)2 When mounted on ceramic substrate (500mm 0.8mm) 67.7 C / W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. t Test Circuit rr Duty 10% 50 100 10 10ms --5V t rr Ordering Information Device Package Shipping memo SB1003M3-TL-E MCPH3 3,000pcs./reel Pb-Free SB1003M3-TL-W MCPH3 3,000pcs./reel Pb-Free and Halogen Free No.8375-2/4 100mA 100mA 10mA