SBR80520LT3G ON Semiconductor

MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G Preferred Devices Surface Mount MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 20 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 90C) 0.5 R L NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 5.5 Storage Temperature Range T 65 to +150 C stg Operating Junction Temperature T 65 to +125 C J Voltage Rate of Change (Rated V ) dv/dt 1000 V/ s R ESD Ratings: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoAmbient (Note 1) R 206 C/W JA Thermal Resistance JunctiontoLead R 150 C/W JL 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v T = 25C T = 100C V F J J (i = 0.1 Amps) 0.300 0.220 F (i = 0.5 Amps) 0.385 0.330 F Maximum Instantaneous Reverse Current (Note 2) I T = 25C T = 100C mA R J J (V = 10 V) 75 A 5 mA R (Rated DC Voltage = 20 V) 250 A 8 mA 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.