2N4921G, 2N4922G, 2N4923G Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. www.onsemi.com Features 1.0 AMPERE Low Saturation Voltage GENERAL PURPOSE Excellent Power Dissipation POWER TRANSISTORS Excellent Safe Operating Area 4080 VOLTS, 30 WATTS Complement to PNP 2N4920G These Devices are PbFree and are RoHS Compliant** COLLECTOR 2, 4 MAXIMUM RATINGS Rating Symbol Value Unit 3 BASE CollectorEmitter Voltage V Vdc CEO 2N4921G 40 2N4922G 60 1 2N4923G 80 EMITTER CollectorEmitter Voltage V Vdc CB 2N4921G 40 2N4922G 60 2N4923G 80 Emitter Base Voltage V 5.0 Vdc EB TO225 Collector Current Continuous (Note 1) I 1.0 Adc CASE 7709 C STYLE 1 Collector Current Peak (Note 1) I 3.0 Adc CM Base Current Continuous I 1.0 Adc B 1 2 3 Total Power Dissipation P D T = 25 C 30 W C 0.24 Derate above 25 C mW/ C MARKING DIAGRAM Operating and Storage Junction T , T 65 to +150 C J stg Temperature Range YWW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 2 assumed, damage may occur and reliability may be affected. N492xG 1. The 1.0 A maximum I value is based upon JEDEC current gain requirements. C The 3.0 A maximum value is based upon actual current handling capability of the device (see Figures 5 and 6). Y = Year WW = Work Week THERMAL CHARACTERISTICS (Note 2) 2N492x = Device Code x = 1, 2, or 3 Characteristic Symbol Max Unit G=PbFree Package Thermal Resistance, JunctiontoCase 4.16 R C/W JC 2. Recommend use of thermal compound for lowest thermal resistance. ORDERING INFORMATION *Indicates JEDEC Registered Data. Device Package Shipping 2N4921G TO225 500 Units / Box (PbFree) 2N4922G TO225 500 Units / Box (PbFree) *For additional information on our PbFree strategy and soldering details, please 2N4923G TO225 500 Units / Box download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: January, 2017 Rev. 15 2N4921/D2N4921G, 2N4922G, 2N4923G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V Vdc CEO(sus) (I = 0.1 Adc, I = 0) C B 2N4921G 40 2N4922G 60 2N4923G 80 Collector Cutoff Current I mAdc CEO (V = 20 Vdc, I = 0) CE B 2N4921G 0.5 (V = 30 Vdc, I = 0) CE B 2N4922G 0.5 (V = 40 Vdc, I = 0) CE B 2N4923G 0.5 Collector Cutoff Current I mAdc CEX (V = Rated V , V = 1.5 Vdc) 0.1 CE CEO EB(off) (V = Rated V , V = 1.5 Vdc, T = 125 C 0.5 CE CEO EB(off) C Collector Cutoff Current I mAdc CBO (V = Rated V , I = 0) 0.1 CB CB E Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 1.0 EB C ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 50 mAdc, V = 1.0 Vdc) 40 C CE (I = 500 mAdc, V = 1.0 Vdc) 30 150 C CE (I = 1.0 Adc, V = 1.0 Vdc) 10 C CE CollectorEmitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 1.0 Adc, I = 0.1 Adc) 0.6 C B BaseEmitter Saturation Voltage (Note 3) V Vdc BE(sat) (I = 1.0 Adc, I = 0.1 Adc) 1.3 C B BaseEmitter On Voltage (Note 3) V Vdc BE(on) (I = 1.0 Adc, V = 1.0 Vdc) 1.3 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 250 mAdc, V = 10 Vdc, f = 1.0 MHz) 3.0 C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 100 kHz) 100 CB E SmallSignal Current Gain h fe (I = 250 mAdc, V = 10 Vdc, f = 1.0 kHz) 25 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: PW 300 s, Duty Cycle 2.0%. www.onsemi.com 2