SMBJ58CA ON Semiconductor

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.SMBJ5V0(C)A - SMBJ170(C)A 600 Watt Transient Voltage Suppressors November 2014 SMBJ5V0(C)A - SMBJ170(C)A 600 Watt Transient Voltage Suppressors Features Glass-Passivated Junction 600 W Peak Pulse Power Capability on 10/1000 s Waveform. Excellent Clamping Capability Low-Incremental Surge Resistance Fast Response Time: Typically Less than 1.0 ps from 0 V SMB/DO-214AA Band denotes cathode on unidirectional devices only. to BV minimum for Unidirectional and 5.0 ns for Bidirectional No band on bi-directional devices. Bi-directional types have CA suffix where electrical characteristics apply in Typical I Less than 1.0 A Above 10 V R both directions suitable for bi-directional applications. UL Certificate E258596 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit P Peak Pulse Power Dissipation on 10/1000 s Waveform 600 W PPM I Peak Pulse Current on 10/1000 s Waveform See Table A PPM Non-Repetitive Peak Forward Surge Current I 100 A FSM (1) Superimposed on Rated Load (JEDEC Method) T Storage Temperature Range -55 to 150 C STG T Operating Junction Temperature Range -55 to 150 C J Note: 1. Measured on 8.3 ms single half-sine wave or equivalent square wave: duty cycle = 4 pulses per minute maximum. 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1