SMF05 ESD Protection Diode Array Quad, Low Clamping Voltage This quad monolithic silicon overvoltage suppressor is designed for applications requiring transient voltage protection capability. It is intended for use in ESD sensitive equipment such as computers, www.onsemi.com printers, cell phones, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using MARKING only one package. These devices are ideal for situations where board DIAGRAM space is at a premium. 45 Specification Features SC88A Package Allows Four Separate Unidirectional Configurations d SC88A/SOT353 60 Low Leakage < 5 A 5 V CASE 419A02 STYLE 5 Breakdown Voltage: 6.1 V 7.2 V 1 mA SCALE 2:1 132 Low Capacitance (90 pF TYP) 60 = Specific Device Code Provides Protection for IEC6100042 d = Date Code PbFree Packages are Available* = PbFree Package (Note: Microdot may be in either location) Mechanical Characteristics Void Free, TransferMolded, Thermosetting Plastic Case 5 1 Corrosion Resistant Finish, Easily Solderable Cathode Cathode Package Designed for Optimal Automated Board Assembly 2 Small Package Size for High Density Applications Anode Applications 3 4 Cathode Cathode Computers Printers ORDERING INFORMATION Cell Phones Device Package Shipping Medical Equipment SMF05T1 SC88A 3000 Tape & Reel SMF05T1G SC88A 3000 Tape & Reel (PbFree) SMF05T2G SC88A 3000 Tape & Reel (PbFree) SMF05CT1 SC88A 3000 Tape & Reel SMF05CT1G SC88A 3000 Tape & Reel (PbFree) SMF05CT2 SC88A 3000 Tape & Reel SMF05CT2G SC88A 3000 Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: November, 2017 Rev. 2 SMF05/DSMF05 MAXIMUM RATINGS (T = 25C unless otherwise noted) A Characteristic Symbol Value Unit Peak Power Dissipation 8 X 20 s T 25C (Note 1) P 200 W A pk Maximum Junction Temperature T 150 C Jmax Operating Junction and Storage Temperature Range T T 55 to +150 C J, stg ESD Discharge IEC6100042, Air Discharge V 16 kV PP IEC6100042, Contact Discharge 9 Lead Solder Temperature (10 seconds duration) T 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current per Figure 2. Derate per Figure 3. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Max Clamping Max Clamping Breakdown Voltage Voltage (V ) Voltage (V ) C C Leakage Current Capacitance Max V 1 mA (Volts) I I BR PP PP I V = 5 V 0 V Bias V I = 200 mA R RWM F F Min Max (pF) (V) I (A) V (V) I (A) V (V) Device ( A) PP C PP C SMF05 6.0 7.2 5.0 90 1.25 1.0 9.5 12 12.5 TYPICAL PERFORMANCE CURVES (T = 25C unless otherwise noted) A 1000 100 t PEAK VALUE I 8 s r RSM 90 PULSE WIDTH (t ) IS DEFINED P 80 AS THAT POINT WHERE THE 70 PEAK CURRENT DECAY = 8 s 100 60 HALF VALUE I /2 20 s RSM 50 40 10 30 t P 20 NOTE: Non Repetitive Surge. 10 1 0 1 10 100 1000 020 40 60 80 t, TIME ( s) t, TIME ( s) Figure 1. Peak Power Dissipation versus Figure 2. Pulse Waveform 8 x 20 s Pulse Width www.onsemi.com 2 P , PEAK SURGE POWER (WATTS) pk % OF PEAK PULSE CURRENT