MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors www.onsemi.com R1 = 10 k , R2 = 10 k NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R 1 Transistor (BRT) contains a single transistor with a monolithic bias R 2 network consisting of two resistors a series base resistor and a Q 1 base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT Q 2 can reduce both system cost and board space. R 2 R 1 Features Simplifies Circuit Design (4) (5) (6) Reduces Board Space Reduces Component Count MARKING DIAGRAMS S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 6 AEC-Q101 Qualified and PPAP Capable* 11 M SOT363 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 419B Compliant 1 MAXIMUM RATINGS (T = 25C both polarities Q (PNP) & Q (NPN), unless otherwise noted) A 1 2 Rating Symbol Max Unit SOT563 11 M Collector-Base Voltage V 50 Vdc CASE 463A CBO 1 Collector-Emitter Voltage V 50 Vdc CEO Collector Current Continuous I 100 mAdc C Input Forward Voltage V 40 Vdc IN(fwd) SOT963 L M Input Reverse Voltage V 10 Vdc IN(rev) CASE 527AD 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 11/L = Specific Device Code ORDERING INFORMATION M = Date Code* = Pb-Free Package Device Package Shipping (Note: Microdot may be in either location) MUN5311DW1T1G, SOT363 3,000/Tape & Reel SMUN5311DW1T1G* *Date Code orientation may vary depending up- on manufacturing location. MUN5311DW1T2G, SOT363 3,000/Tape & Reel SMUN5311DW1T2G* SMUN5311DW1T3G SOT363 10,000/Tape & Reel NSBC114EPDXV6T1G, SOT563 4,000/Tape & Reel NSVBC114EPDXV6T1G* Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: July, 2018 Rev. 4 DTC114EP/DMUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 ORDERING INFORMATION Device Package Shipping NSBC114EPDXV6T5G SOT563 8,000/Tape & Reel NSBC114EPDP6T5G SOT963 8,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5311DW1 (SOT363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5311DW1 (SOT363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 493 (Note 2) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 1) 188 (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC114EPDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 350 NSBC114EPDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC114EPDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 4) 231 MW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 540 (Note 5) 464 NSBC114EPDP6 (SOT963) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 MW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 www.onsemi.com 2