X-On Electronics has gained recognition as a prominent supplier of SRV05-4MR6T1G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SRV05-4MR6T1G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SRV05-4MR6T1G ON Semiconductor

SRV05-4MR6T1G electronic component of ON Semiconductor
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See Product Specifications
Part No.SRV05-4MR6T1G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes LOW CAP TSOP-6 SMB SPCL
Datasheet: SRV05-4MR6T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.167 ea
Line Total: USD 2.17 
Availability - 5745
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5745
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 2.167
10 : USD 1.87
100 : USD 1.507
500 : USD 1.287
1000 : USD 1.111
3000 : USD 1.0945
6000 : USD 1.0945
9000 : USD 1.0945

3463
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 302
Multiples : 1
302 : USD 1.6191
500 : USD 1.5503
1000 : USD 1.4642

44255
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 302
Multiples : 1
302 : USD 1.6191
500 : USD 1.5503
1000 : USD 1.4642

1142
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 302
Multiples : 1
302 : USD 1.6191
500 : USD 1.5503
1000 : USD 1.4642

   
Manufacturer
Product Category
RoHS - XON
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Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Channels
Factory Pack Quantity :
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Mxhts
Subcategory
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We are delighted to provide the SRV05-4MR6T1G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SRV05-4MR6T1G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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M SRV05-4 ESD Protection Diode Array Low Clamping Voltage The SRV054MR6 surge protection is designed to protect high speed data lines from ESD, EFT, and lighting. Features www.onsemi.com Protects 4 I/O Lines LOW CAPACITANCE Low Working Voltage: 5 V SURGE PROTECTION ARRAY Low Clamping Voltage 300 WATTS PEAK POWER Low Capacitance (<5 pF) for High Speed Interfaces 6 VOLTS Transient Protection for High Speed Lines to: IEC6100042 (ESD) 15 kV (air), 8 kV (contact) PIN CONFIGURATION IEC6100044 (EFT) 40 A AND SCHEMATIC IEC6100045 (Lightning) 12 A TSOP6 is Footprint Compatible with SOT23 6 Lead, I/O 1 6 I/O SC59 6 Lead and SC74 UL Flammability Rating of 94 V0 V 2 5 V N P This is a PbFree Device Typical Applications I/O 3 4 I/O High Speed Communication Line Protection USB 1.1 and 2.0 Power and Data Line Protection 6 Digital Video Interface (DVI) Monitors and Flat Panel Displays 1 TSOP6 MAXIMUM RATINGS (T = 25C unless otherwise noted) J CASE 318G Rating Symbol Value Unit PLASTIC Peak Power Dissipation P 300 W pk 8 x 20 s T = 25C (Note 1) A MARKING DIAGRAM Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg 63 Lead Solder Temperature T 260 C L Maximum (10 Seconds) Human Body Model (HBM) ESD 16000 V 63 = Specific Device Code Machine Model (MM) 400 M = Date Code IEC 6100042 Air (ESD) 30000 = PbFree Package IEC 6100042 Contact (ESD) 30000 (Note: Microdot may be in either location) IEC 6100044 (5/50 ns) EFT 40 A *Date Code orientation may vary IEC 6100045 (8 x 20 s) 12 A depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. Nonrepetitive current pulse per Figure 5 (Pin 5 to Pin 2) Device Package Shipping See Application Note AND8308/D for further description of SRV054MR6T1G TSOP6 3000/Tape & Reel survivability specs. (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: November, 2017 Rev. 3 SRV054/DSRV054 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM V I V I Maximum Reverse Leakage Current V R F R RWM I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation pk UniDirectional C Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T =25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 2) 5.0 V RWM Breakdown Voltage V I =1 mA, (Note 3) 6.0 V BR T Reverse Leakage Current I V = 5 V 5.0 A R RWM Clamping Voltage V I = 1 A (Note 4) 12.5 V C PP Clamping Voltage V I = 5 A (Note 4) 17.5 V C PP Junction Capacitance C V = 0 V, f=1 MHz between I/O Pins and GND 3.0 5.0 pF J R Junction Capacitance C V = 0 V, f=1 MHz between I/O Pins 1.5 3.0 pF J R Clamping Voltage V Per IEC 6100042 (Note 5) Figure 1 and 2 V C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 4. Nonrepetitive current pulse per Figure 5 (Any I/O Pin to Ground) 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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