SS12 ON Semiconductor

SS12 - S100 Schottky Rectifier Description The SS12S100 series includes highefficiency, low power loss, generalpropose schottky rectifiers. The clip bonded leg structure provides high thermal performance and low electrical resistance. www.onsemi.com These rectifiers are suited for free wheeling, secondary rectification, and reverse polarity protection applications. Cathode (2) Features GlassPassivated Junctions Anode HighCurrent Capability, Low V F (1) SMA These Devices are PbFree, Halogen Free and are RoHS Compliant CASE 403AE Applications Low Voltage Anode Cathode HighFrequency Inverters (1) (2) Free Wheeling Polarity Protection MARKING DIAGRAM Y&Z&3 Sxxx Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Date Code (Year & Week) Sxxx = Specific Device Code ORDERING INFORMATION Part Number Top Mark Package Shipping SS12 SS12 SMA 7500 / Tape & Reel (PbFree/Halogen Free) SS13 SS13 SMA 7500 / Tape & Reel (PbFree/Halogen Free) SS14 SS14 SMA 7500 / Tape & Reel (PbFree/Halogen Free) SS15 SS15 SMA 7500 / Tape & Reel (PbFree/Halogen Free) SS16 SS16 SMA 7500 / Tape & Reel (PbFree/Halogen Free) SS18 SS18 SMA 7500 / Tape & Reel (PbFree/Halogen Free) SS19 SS19 SMA 7500 / Tape & Reel (PbFree/Halogen Free) S100 S100 SMA 7500 / Tape & Reel (PbFree/Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: January, 2019 Rev. 3 SS19/DSS12 S100 Specifications ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Value SS12 SS13 SS14 SS15 SS16 SS18 SS19 S100 Symbol Parameter Unit V Peak Repetitive Reverse Voltage 20 30 40 50 60 80 90 100 V RRM I Maximum Average Forward Current: 1.0 A F(AV) 0.375inch Lead Length at T = 75C A I NonRepetitive Peak Forward Surge 40 A FSM Current: 8.3 ms Single HalfSine Wave T Operating Junction Temperature 65 to +125 C J T Storage Temperature Range 65 to +150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Characteristic Value Unit P Power Dissipation 1.1 W D R Thermal Resistance, JunctiontoAmbient (Note 1) 88 C/W JA 1. Device mounted on FE4 PCB 0.013 mm. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Value SS12 SS13 SS14 SS15 SS16 SS18 SS19 S100 Symbol Parameter Conditions Unit V Maximum Forward I = 1.0 A 500 700 850 mV F F Voltage I Maximum Reverse T = 25C 0.2 mA R A Current at Rated V R T = 100C 10 A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2