SS24 ON Semiconductor

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package SS22T3G, SS24T3G, NRVBSS24T3G, NRVBSS24NT3G www.onsemi.com These devices employ the Schottky Barrier principle in a SCHOTTKY BARRIER metaltosilicon power rectifier. Features epitaxial construction with RECTIFIER oxide passivation and metal overlay contact. Ideally suited for low 2 AMPERES voltage, high frequency switching power supplies free wheeling 20, 40 VOLTS diodes and polarity protection diodes. Features Compact Package with JBend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction SMB Guardring for OverVoltage Protection CASE 403A Low Forward Voltage Drop NRVB Prefix for Automotive and Other Applications Requiring MARKING DIAGRAM Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable* AYWW SS2x These Devices are PbFree and are RoHS Compliant Mechanical Characteristics SS2x = Specific Device Code Case: Molded Epoxy x = 2 ro 4 Epoxy Meets UL 94 V0 0.125 in A = Assembly Location** Weight: 95 mg (approximately) Y = Year WW = Work Week Cathode Polarity Band = PbFree Package Lead and Mounting Surface Temperature for Soldering Purposes: (Note: Microdot may be in either location) 260C Max. for 10 Seconds **The Assembly Location code (A) is front side Available in 12 mm Tape, 2500 Units per 13 in Reel, Add T3 optional. In cases where the Assembly Location is Suffix to Part Number stamped in the package, the front side assembly code may be blank. Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ORDERING INFORMATION ESD Ratings: Machine Model = C Shipping ESD Ratings: Human Body Model = 3B Device Package SMB 2500 / SS22T3G (PbFree) Tape & Reel 2500 / SS24T3G SMB (PbFree) Tape & Reel SMB 2500 / NRVBSS24T3G* (PbFree) Tape & Reel 2500 / NRVBSS24NT3G* SMB Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: March, 2020 Rev. 8 SS24/DSS22T3G, SS24T3G, NRVBSS24T3G, NRVBSS24NT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage SS22 V 20 R SS24 40 Average Rectified Forward Current I 2.0 A O (At Rated V , T = 132C) R L Peak Repetitive Forward Current I 3.0 A FRM (At Rated V , Square Wave, R 100 kHz, T = 127C) C NonRepetitive Peak Surge Current I 75 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage/Operating Case Temperature T , T 55 to +150 C stg C Operating Junction Temperature (Note 1) T 55 to +150 C J Voltage Rate of Change dv/dt 10,000 V/ s (Rated V , T = 25C) R J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, C/W JunctiontoLead (Note 2) R 24 JL Thermal Resistance, JunctiontoAmbient (Note 3) R 80 JA ELECTRICAL CHARACTERISTICS v T = 25C T = 125C V F J J Maximum Instantaneous Forward Voltage (Note 4) 0.50 0.46 see Figure 2 (i = 2.0 A) F I T = 25C T = 100C mA R J J Maximum Instantaneous Reverse Current (Note 4) see Figure 4 (V = 40 V) 0.4 5.7 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with minimum recommended pad size, PC Board FR4. 3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 4. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. www.onsemi.com 2