X-On Electronics has gained recognition as a prominent supplier of SSVMUN5312DW1T2G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. SSVMUN5312DW1T2G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

SSVMUN5312DW1T2G ON Semiconductor

SSVMUN5312DW1T2G electronic component of ON Semiconductor
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See Product Specifications
Part No.SSVMUN5312DW1T2G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: ON Semiconductor Bipolar Transistors - Pre-Biased SS BRT COMPLEMENTARY
Datasheet: SSVMUN5312DW1T2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.3795
10 : USD 0.3036
100 : USD 0.2082
1000 : USD 0.1265
3000 : USD 0.1104
9000 : USD 0.1024
24000 : USD 0.0989
45000 : USD 0.0978
99000 : USD 0.0943
N/A

Obsolete
   
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Product Category
RoHS - XON
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We are delighted to provide the SSVMUN5312DW1T2G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSVMUN5312DW1T2G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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R MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6 Complementary Bias Resistor Transistors www.onsemi.com R1 = 22 k , R2 = 22 k NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R Transistor (BRT) contains a single transistor with a monolithic bias 1 R 2 network consisting of two resistors a series base resistor and a Q 1 base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT Q 2 can reduce both system cost and board space. R 2 Features R 1 Simplifies Circuit Design (4) (5) (6) Reduces Board Space Reduces Component Count MARKING DIAGRAMS S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 6 AEC-Q101 Qualified and PPAP Capable* These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT363 12 M CASE 419B02 Compliant MAXIMUM RATINGS 1 (T = 25C both polarities Q (PNP) & Q (NPN), unless otherwise noted) A 1 2 Rating Symbol Max Unit SOT563 Collector-Base Voltage V 50 Vdc 12 M CBO CASE 463A Collector-Emitter Voltage V 50 Vdc CEO 1 Collector Current Continuous I 100 mAdc C Input Forward Voltage V 40 Vdc IN(fwd) SOT963 Input Reverse Voltage V 10 Vdc M IN(rev) CASE 527AD Stresses exceeding those listed in the Maximum Ratings table may damage the 1 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 12/R = Specific Device Code ORDERING INFORMATION M = Date Code* Device Package Shipping = Pb-Free Package MUN5312DW1T1G, SOT363 3,000 / Tape & Reel (Note: Microdot may be in either location) SMUN5312DW1T1G* *Date Code orientation may vary depending NSVMUN5312DW1T3G* SOT363 10,000 / Tape & Reel upon manufacturing location. MUN5312DW1T2G, SOT363 3,000 / Tape & Reel NSVMUN5312DW1T2G* NSBC124EPDXV6T1G, SOT563 4,000 / Tape & Reel NSVBC124EPDXV6T1G* NSBC124EPDXV6T5G SOT563 8,000 / Tape & Reel NSBC124EPDP6T5G SOT963 8,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2017 Rev. 5 DTC124EP/DMUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5312DW1 (SOT363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5312DW1 (SOT363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 493 (Note 2) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 1) 188 (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC124EPDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 350 NSBC124EPDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC124EPDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 4) 231 MW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 540 (Note 5) 464 NSBC124EPDP6 (SOT963) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 MW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 369 (Note 5) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 2 4. FR4 100 mm , 1 oz. copper traces, still air. 2 5. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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