DATA SHEET www.onsemi.com MARKING ESD Protection Diode DIAGRAM Low Capacitance ESD Protection Diode UDFN10 7M M CASE 517BB for High Speed Data Line 7M = Specific Device Code (tbd) ESD7104 M = Date Code = PbFree Package The ESD7104 surge protection is designed to protect high speed (Note: Microdot may be in either location) data lines from ESD. Ultralow capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage WDFNW10 sensitive high speed data lines. The flowthrough style package AAC M CASE 515AH allows for easy PCB layout and matched trace lengths necessary to maintain consistent impedance between high speed differential lines AAC = Specific Device Code such as USB 3.0 and HDMI. M = Date Code Features Low Capacitance (0.3 pF Typical, I/O to GND) PIN CONFIGURATION Low ESD Clamping Voltage AND SCHEMATIC Protection for the Following IEC Standards: IEC 6100042 (Level 4) N/C N/C GND N/C N/C UL Flammability Rating of 94 V0 10 98 7 6 SZESD7104MTWTAG Wettable Flank Package for optimal Automated Optical Inspection (AOI) 1423 5 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and I/O I/O GND I/O I/O PPAP Capable I/O I/O I/O I/O These Devices are PbFree, Halogen Free/BFR Free and are RoHS Pin 1 Pin 2 Pin 4 Pin 5 Compliant Typical Applications USB 3.0 eSATA 3.0 Thunderbolt (Light Peak) GND HDMI 1.3/1.4 Pin 3 Display Port = MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L Maximum (10 Seconds) ORDERING INFORMATION See detailed ordering, marking and shipping information in the IEC 6100042 Contact (ESD) ESD 15 kV package dimensions section on page 9 of this data sheet. IEC 6100042 Air (ESD) ESD 15 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2021 Rev. 7 ESD7104/DESD7104 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 5.0 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 5.5 V BR T Reverse Leakage Current I V = 5 V, I/O Pin to GND 1.0 A R RWM Clamping Voltage (Note 1) V I = 1 A, I/O Pin to GND (8 x 20 s pulse) 10 V C PP Clamping Voltage (Note 2) V IEC6100042, 8 KV Contact See Figures 1 and 2 V C Clamping Voltage (Note 3) V I = 8 A 14.1 V C PP I = 16 A 19.5 PP Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins 0.2 0.3 pF J R Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.3 0.35 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Surge current waveform per Figure 5. 2. For test procedure see Figures 3 and 4 and application note AND8307/D. 3. ANSI/ESD STM5.5.1 2008 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 80 10 70 0 60 10 50 20 40 30 30 40 20 50 10 60 0 70 10 80 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. IEC6100042 +8 KV Contact Figure 2. IEC6100042 8 KV Contact Clamping Voltage Clamping Voltage www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)