X-On Electronics has gained recognition as a prominent supplier of SZESD7351HT1G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SZESD7351HT1G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SZESD7351HT1G ON Semiconductor

SZESD7351HT1G electronic component of ON Semiconductor
SZESD7351HT1G ON Semiconductor
SZESD7351HT1G ESD Suppressors / TVS Diodes
SZESD7351HT1G  Circuit Protection

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See Product Specifications
Part No. SZESD7351HT1G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: TVS Diodes - Transient Voltage Suppressors LOW CAP ESD IN SOD-323
Datasheet: SZESD7351HT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
960: USD 0.0677 ea
Line Total: USD 64.99 
Availability - 1833
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 960  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0979
6000 : USD 0.0969
9000 : USD 0.0951
12000 : USD 0.0901
27000 : USD 0.0835
51000 : USD 0.0831
102000 : USD 0.0827
150000 : USD 0.0822

1833
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 960
Multiples : 1
960 : USD 0.0677

1796
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 327
Multiples : 1
327 : USD 0.1989
498 : USD 0.1307
531 : USD 0.1225
568 : USD 0.1146
611 : USD 0.1064
660 : USD 0.0985
1000 : USD 0.0905

194
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 5
Multiples : 5
5 : USD 0.2826
50 : USD 0.2198
150 : USD 0.1653
500 : USD 0.1227
3000 : USD 0.1113
6000 : USD 0.1044

5887
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.2963
10 : USD 0.1912
100 : USD 0.1056
1000 : USD 0.0946
3000 : USD 0.0803
9000 : USD 0.0803

37830
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 4681
Multiples : 1
4681 : USD 0.1001

1796
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 519
Multiples : 1
519 : USD 0.1252
557 : USD 0.1166
602 : USD 0.1079
655 : USD 0.0992
1000 : USD 0.0905

39964
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 4681
Multiples : 1
4681 : USD 0.1001

1833
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 960
Multiples : 1
960 : USD 0.0677

8730
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1272
6000 : USD 0.126
9000 : USD 0.1236
12000 : USD 0.1171
27000 : USD 0.1085

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SZESD7351HT1G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SZESD7351HT1G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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ESD7351, SZESD7351 Series ESD Protection Diode The ESD7351 Series is designed to protect voltage sensitive components that require ultra low capacitance from ESD and transient voltage events. Excellent clamping capability, low www.onsemi.com capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high MARKING DIAGRAMS frequency designs such as USB 2.0 high speed and antenna line applications. 2 SOD323 AF Features CASE 477 M 1 Low Capacitance (0.6 pF Max, I/O to GND) Low Clamping Voltage 2 Standoff Voltage: 3.3 V SOD523 AE CASE 502 Low Leakage 12 1 Response Time is < 1 ns Low Dynamic Resistance < 1 SOD923 AD M IEC6100042 Level 4 ESD Protection CASE 514AB SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and X, XX = Specific Device Code PPAP Capable M = Date Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant PIN CONFIGURATION Typical Applications AND SCHEMATIC RF Signal ESD Protection RF Switching, PA, and Antenna ESD Protection Near Field Communications 1 2 Cathode Anode MAXIMUM RATINGS Rating Symbol Value Unit IEC 6100042 (ESD) Contact 20 kV Air 20 ORDERING INFORMATION See detailed ordering and shipping information in the package Total Power Dissipation on FR5 Board P 150 mW D dimensions section on page 5 of this data sheet. (Note 1) T = 25C A Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2018 Rev. 5 ESD7351/D MESD7351, SZESD7351 Series ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 3.3 V RWM Breakdown Voltage (Note 2) V I = 1 mA 5.0 V BR T Reverse Leakage Current I V = 3.3 V < 1.0 50 nA R RWM Clamping Voltage (Note 3) V I = 1 A 8.0 V C PP Clamping Voltage (Note 3) V I = 3 A 10 V C PP Junction Capacitance C V = 0 V, f = 1 MHz 0.43 0.6 pF J R V = 0 V, f < 1 GHz 0.43 0.6 R Dynamic Resistance R TLP Pulse 0.35 DYN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Breakdown voltage is tested from pin 1 to 2. 3. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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