ESD7451, SZESD7451 ESD Protection Diodes MicroPackaged Diodes for ESD Protection The ESD7451 is designed to protect voltage sensitive components that require ultralow capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, www.onsemi.com and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, the part is well suited for use in high frequency designs 1 2 such as USB 2.0 high speed and antenna line applications. Anode Anode Features UltraLow Capacitance (0.35 pF Max) MARKING Low Clamping Voltage DIAGRAM Standoff Voltage: 3.3 V Low Leakage XDFN2 E M CASE 711AM Response Time is < 1 ns Low Dynamic Resistance < 1 Protection for the Following Standards: E = Specific Device Code M = Date Code IEC 6100042 (Level 4) & ISO 10605 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and ORDERING INFORMATION PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Device Package Shipping Compliant ESD7451N2T5G XDFN2 8000 / Tape & Typical Applications (PbFree) Reel RF Signal ESD Protection SZESD7451N2T5G XDFN2 8000 / Tape & (PbFree) Reel RF Switching, PA, and Antenna ESD Protection Near Field Communications For information on tape and reel specifications, including part orientation and tape sizes, please MAXIMUM RATINGS refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Rating Symbol Value Unit Total Power Dissipation on FR5 Board P 250 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) IEC 6100042 Contact ESD 25 kV IEC 6100042 Air 25 ISO 10605 150 pF/2 k 30 ISO 10605 330 pF/2 k 30 ISO 10605 330 pF/330 20 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2016 Rev. 5 ESD7451/DESD7451, SZESD7451 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional TVS *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 3.3 V RWM Breakdown Voltage (Note 2) V I = 1 mA 5.0 6.0 7.5 V BR T Reverse Leakage Current I < 1.0 50 nA R Clamping Voltage (Note 3) V I = 1 A 10 V C PP I = 3 A 13 PP Clamping Voltage, ESD V Per IEC6100042 Waveform See Figures 1 & 2 C Clamping Voltage, TLP V I = 8 A 13.5 V C PP I = 16 A 18 PP Dynamic Resistance R TLP Pulse 0.55 DYN Junction Capacitance C V = 0 V, f = 1 MHz 0.25 0.35 pF J R V = 0 V, f = 1 GHz 0.22 0.35 R 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform shown in Figure 9. A TYPICAL CHARACTERISTICS 120 20 0 100 20 80 40 60 60 40 20 80 0 100 20 120 25 0 25 50 75 100 125 150 175 25 0 25 50 75 100 125 150 175 TIME (ns) TIME (ns) Figure 1. Typical IEC6100042 + 8 kV Contact Figure 2. Typical IEC6100042 8 kV Contact ESD Clamping Voltage ESD Clamping Voltage www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)