ESD7471, SZESD7471 Ultra-Low Capacitance ESD Protection MicroPackaged Diodes for ESD Protection The ESD7471 is designed to protect voltage sensitive components that require ultra-low capacitance from ESD and transient voltage www.onsemi.com events. Excellent clamping capability, low capacitance, high breakdown voltage, high linearity, low leakage, and fast response time make these parts ideal for ESD protection on designs where board space is at a premium. It has industry leading capacitance linearity over voltage making it ideal for RF applications. This capacitance linearity combined with the extremely small package and low insertion loss makes this part well suited for use in antenna line MARKING applications for wireless handsets and terminals. DIAGRAM Features XDFN2 Industry Leading Capacitance Linearity Over Voltage D M CASE 711AM UltraLow Capacitance: 0.35 pF Max Standoff Voltage: 5.3 V D = Specific Device Code Low Leakage: < 1 nA M = Date Code = PbFree Package Low Dynamic Resistance: < 1 IEC6100042 Level 4 ESD Protection 1000 ESD IEC6100042 Strikes 8 kV Contact / Air Discharged ORDERING INFORMATION SZ Prefix for Automotive and Other Applications Requiring Unique Device Package Shipping Site and Control Change Requirements AECQ101 Qualified and PPAP Capable ESD7471N2T5G XDFN2 8000 / Tape & (PbFree) Reel These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SZESD7471N2T5G XDFN2 8000 / Tape & (PbFree) Reel Typical Applications RF Signal ESD Protection For information on tape and reel specifications, including part orientation and tape sizes, please RF Switching, PA, and Antenna ESD Protection refer to our Tape and Reel Packaging Specifications Near Field Communications Brochure, BRD8011/D. USB 2.0, USB 3.0 MAXIMUM RATINGS (T = 25C unless otherwise noted) A Rating Symbol Value Unit IEC 6100042 Contact (ESD) (Note 1) ESD 20 KV IEC 6100042 Air (ESD) (Note 1) ESD 20 kV IEC 6100045 (ESD) (Note 2) ESD 2.2 A Total Power Dissipation (Note 3) T = 25C P 300 mW A D Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to C J stg +150 Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. At least 10 discharges at T = 25C, per IEC6100042 waveform. A 2. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A 3. Mounted with recommended minimum pad size, DC board FR4 Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2016 Rev. 2 ESD7471/DESD7471, SZESD7471 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional TVS *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Condition Min Typ Max Unit Reverse Working Voltage V 5.3 V RWM Breakdown Voltage V I = 1 mA (Note 4) 7.0 V BR T Reverse Leakage Current I V = 5.3 V < 1 50 nA R RWM Clamping Voltage V I = 1 A (Note 5) 13 15 V C PP Junction Capacitance C V = 0 V, f = 1 MHz 0.24 0.35 pF J R V = 0 V, f = 1 GHz 0.24 0.35 R Dynamic Resistance R TLP Pulse 0.8 DYN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 5. Nonrepetitive current pulse at 25C, per IEC6100045 waveform. TYPICAL CHARACTERISTICS 120 20 100 0 20 80 40 60 60 40 80 20 100 0 20 120 25 0 25 50 75 100 125 150 25 0 25 50 75 100 125 150 TIME (ns) TIME (ns) Figure 1. Typical IEC6100042 + 8 kV Contact Figure 2. Typical IEC6100042 8 kV Contact ESD Clamping Voltage ESD Clamping Voltage www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)