ESD7481, SZESD7481 ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD7481 is designed to protect voltage sensitive components that require ultralow capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, www.onsemi.com and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, the part is well suited for use in high frequency designs 1 2 Cathode Anode such as USB 2.0 high speed and antenna line applications. Features UltraLow Capacitance 0.25 pF MARKING Low Clamping Voltage DIAGRAM Small Body Outline Dimensions: 0.60 mm x 0.30 mm PIN 1 Low Body Height: 0.3 mm X3DFN2 F M CASE 152AF Standoff Voltage: 3.3 V Low Leakage F = Specific Device Code Insertion Loss: 0.030 dBm M = Date Code Response Time is < 1 ns Low Dynamic Resistance < 1 IEC6100042 Level 4 ESD Protection ORDERING INFORMATION SZ Prefix for Automotive and Other Applications Requiring Unique Device Package Shipping Site and Control Change Requirements AECQ101 Qualified and ESD7481MUT5G X3DFN2 10000 / Tape & PPAP Capable (PbFree) Reel These Devices are PbFree, Halogen Free/BFR Free and are RoHS SZESD7481MUT5G X3DFN2 15000 / Tape & Compliant (PbFree) Reel Typical Applications For information on tape and reel specifications, RF Signal ESD Protection including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications RF Switching, PA, and Antenna ESD Protection Brochure, BRD8011/D. Near Field Communications MAXIMUM RATINGS Rating Symbol Value Unit IEC 6100042 (ESD) Contact 20 kV Air 20 Total Power Dissipation on FR5 Board P 250 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 40 to +125 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2017 Rev. 9 ESD7481/DESD7481, SZESD7481 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 3.3 V RWM Breakdown Voltage (Note 2) V I = 1 mA 6.0 V BR T Reverse Leakage Current I V = 3.3 V < 1.0 50 nA R RWM Clamping Voltage (Note 3) V I = 1 A 10 V C PP Clamping Voltage (Note 3) V I = 3 A 12 V C PP ESD Clamping Voltage V Per IEC6100042 See Figures 1 and 2 C Junction Capacitance C V = 0 V, f = 1 Mhz 0.25 0.40 pF J R V = 0 V, f < 1 GHz 0.15 0.30 R Dynamic Resistance R TLP Pulse 0.60 DYN Insertion Loss f = 1 Mhz 0.030 dB f = 8.5 GHz 0.234 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2