ESD9B, SZESD9B ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD9B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in wwwwww..onsemi.comonsemi.com cellular phones, MP3 players, digital cameras and many other portable applications where board space comes at a premium. Specification Features Low Capacitance 15 pF Low Clamping Voltage Small Body Outline Dimensions: 0.039 x 0.024 (1.0mm x 0.60mm) Low Body Height: 0.016 (0.4 mm) SOD923 Standoff Voltage: 3.3 V, 5 V CASE 514AB Low Leakage Response Time is < 1 ns MARKING DIAGRAM IEC6100042 Level 4 ESD Protection AECQ101 Qualified and PPAP Capable X M SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements This is a PbFree Device X = Specific Device Code M Date Code Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V0 ORDERING INFORMATION LEAD FINISH: 100% Matte Sn (Tin) Device Package Shipping MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260C ESD9B3.3ST5G SOD923 8000/Tape & Reel (PbFree) Device Meets MSL 1 Requirements ESD9B5.0ST5G SOD923 8000/Tape & Reel MAXIMUM RATINGS (PbFree) Rating Symbol Value Unit SZESD9B5.0ST5G SOD923 8000/Tape & Reel (PbFree) IEC 6100042 (ESD) Contact 18 kV Air 18 For information on tape and reel specifications, including part orientation and tape sizes, please IEC 6100044 (EFT) 40 A refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Total Power Dissipation on FR5 Board P 300 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: November, 2017 Rev. 6 ESD9B/DESD9B, SZESD9B ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional C Capacitance V = 0 V and f = 1.0 MHz R ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A V (V) C V I (nA) V (V) I Max Per 8 x 20 s RWM R BR T (V) V (Note 2) I C (pF) V (Note 4) RWM T C Device Per IEC6100042 (Note 3) Marking Max Max Min Max mA Typ I = 1 A I = 2 A Device PP PP ESD9B3.3ST5G 2* 3.3 100 5.0 7.0 1.0 15 Figures 1 and 2 10.5 11.5 See Below ESD9B5.0ST5G, E 5.0 100 5.8 7.8 1.0 15 Figures 1 and 2 12.5 15.0 SZESD9B5.0ST5G See Below Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. * Rotated 270. 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 4. Surge current waveforms per Figure 5. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2